Samsung Electronics Co., Ltd.

Shinho Oh

Jinyoung Kim

Sehwan Park

Dongmin Shin

Youngdeok Seo

Woohyun Kang

Yeongcheol Jo

A method of operating a memory controller includes: collecting hard decision information based on data read from memory cells of a monitoring unit using a normal read level; collecting soft decision information based on data read from the monitoring unit using one or more offset read levels that are different from the normal read level; storing first strong error information determined based on the hard decision information and the soft decision information in a memory in the memory controller; and updating second strong error information determined for the monitoring unit in the memory after the first strong error information is stored. The second strong error information is used to correct an error in data read in response to a read request from a host.

Memory controller managing strong error information and operating method thereof

A method of operating a nonvolatile memory device is provided. The method includes: dividing a memory block of a plurality of memory blocks provided in the nonvolatile memory device into a plurality of retention groups; generating time-difference information including a plurality of erase program interval (EPI) values corresponding to the plurality of retention groups; generating offset information including a plurality of offset values corresponding to differences between a plurality of default read voltages and a plurality of corrected read voltages; generating compensated read voltages corresponding to a read address based on the offset information and the time-difference information; and performing a read operation to read data from the nonvolatile memory device based on the read address and the compensated read voltages.

Storage device including nonvolatile memory device and method of operating the same

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Yongin-si, South Korea

Shinho Oh