Samsung Electro-mechanics Co., Ltd.

Shinhaeng Heo

Wonsun Hwang

Byeonghak Jo

Hyunjin Yoo

Dongil Kang

A radio frequency (RF) switch includes a switch transistor, and a bias transistor having a body terminal and a first terminal connected to each other, a diode-connected configuration, and configured to provide a first current to a body terminal of the switch transistor corresponding to a voltage applied to a control terminal of the switch transistor.

Radio frequency switch

A charge pump circuit is provided. The charge pump circuit includes a first switch configured to have a first end connected to an input terminal that receives a power voltage; a second switch configured to have a first end connected to the input terminal; a first capacitor configured to have a first end connected to a second end of the first switch; a second capacitor connected between a second end of the first capacitor and a second end of the second switch; a third switch connected between the second end of the second switch and ground; a fourth switch connected between the first end of the first capacitor and a first output terminal and configured to output a first output voltage; and a fifth switch connected between a second output terminal and a node between the first capacitor and the second capacitor, and configured to output a second output voltage.

Charge pump circuit and operating method thereof

An RF switch circuit is provided. The RF switch circuit may include a first switch disposed between a transmitting port and an antenna port and including a plurality of first transistors; a second switch disposed between the antenna port and a receiving port and including a plurality of second transistors; and a switch control circuit configured to generate control voltages to control the first transistors and the second transistors, generate a first Off voltage to turn off at least one first transistor among the plurality of first transistors and the plurality of second transistors in a transmitting mode, and generate a second Off voltage to turn off at least one second transistor among the plurality of first transistors and the plurality of second transistors in a receiving mode, wherein the second Off voltage may be higher than the first Off voltage.

Growing community of inventors

Suwon-si, South Korea

Shinhaeng Heo