Rohm Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Sanyo Chemical Industries, Ltd.

Shingo Yoshida

Motoharu Haga

Kenji Fujii

Akihiro Kimura

Yasumasa Kasuya

Hideki Shimamoto

Shuntaro Takahashi

Toichi Nagahara

Hajime Okuda

Hisao Nagara

Katsuji Shiono

Takaaki Kishi

Keiji Mori

Yoshiteru Kuwae

Kazuki Okuyama

Kazuhisa Kumagai

A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

Semiconductor device

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

This invention relates to an electrolyte for use in electrolytic capacitors and also to an electrolytic capacitor using the electrolyte. The solute for the electrolyte is a quaternary ammonium salt of either a carboxylic acid selected from the group consisting of phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid and maleic acid, or an alkyl or nitro-substituted compound of the acid. The electrolytic capacitor has improved low temperature characteristics and an improved variation in characteristics at high temperatures in relation to time with a prolonged life.

Electrolyte for electrolytic capacitors and electrolytic capacitor using

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Kyoto, Japan

Shingo Yoshida