Mcube, Inc.

Shingo Yoneoka

Wenhua Zhang

Sudheer S Sridharamurthy

Anthony Francis Flannery, Jr

Te-Hsi “Terrence” Lee

Terrence Lee

Raymond Merrill, Jr

Te-Hsi Terrence Lee

Dolf Van Der Heide

A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

Method to package multiple mems sensors and actuators at different gases and cavity pressures

A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

Multi-axis integrated MEMS inertial sensing device on single packaged chip

A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

MEMS structure with improved shielding and method

A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

Multi-axis MEMS rate sensor device

An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

Method to package multiple MEMS sensors and actuators at different gases and cavity pressures

An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Method and structure of monolithically integrated absolute pressure sensor

A method for providing acceleration data with reduced substrate-displacement bias includes receiving in an accelerometer an external acceleration, determining the acceleration data with reduced substrate displacement bias in a compensation portion in response to a first and a second displacement indicators from a MEMS transducer, and, in response to substrate compensation factors from a MEMS compensation portion, outputting the acceleration data with reduced substrate displacement bias, wherein the first displacement indicator and the second displacement indicator are determined by the MEMS transducer relative to a substrate in response to the external acceleration and to a substrate displacement, and wherein the substrate compensation factors are determined by the MEMS compensation portion relative to the substrate in response to the substrate displacement.

Substrate curvature compensation methods and apparatus

An integrated MEMS inertial sensor device includes one or more three-axis MEMS inertial sensor devices, such as accelerometers, with dual or single proof mass configurations. These designs can be compact and can decouple the motion of each axis to minimize the measurement errors due to cross-axis sensitivity. Some embodiments include a frame to decouple the motion of two axes and to provide geometric symmetry. Some embodiments also include double-folded springs. In a specific embodiment, the three axes of an integrated MEMS accelerometer device are entirely decoupled. Thus, the actuation of each axis, through a force due to acceleration, has little or substantially no effect on the other axes.

MEMS-based dual and single proof-mass accelerometer methods and apparatus

A method for fabricating a multiple MEMS device. A semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel, can be provided. The first MEMS can be encapsulated within the first cavity and the second MEMS device can be encapsulated within the second cavity. These devices can be encapsulated within a provided first encapsulation environment at a first air pressure, encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity can then be subjected to a provided second encapsulating environment at a second air pressure via the channel of the second cavity.

Distributed MEMS devices time synchronization methods and system

An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

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San Jose, CA, United States of America

Shingo Yoneoka