Murata Manufacturing Co., Ltd.

Shingo Yanagihara

Hiroshi Okabe

Kenji Saito

Tsutomu Kobori

Yoshifumi Takahashi

Satoshi Tanaka

Hidenori Obiya

Takaya Wada

Reiji Nakajima

Shinya Hitomi

Tsuyoshi Sato

Syunji Yoshimi

Kazutaka Mukaiyama

Shigeru Yoshida

Yuki Higashide

A multi-finger transistor includes unit transistors each including a first terminal electrically connected to a reference potential, a second terminal that receives an RF signal and a bias current, and a third terminal that outputs an amplified signal; a common input terminal electrically connected in parallel to the second terminals of the unit transistors and that receives the RF signal; a common bias terminal electrically connected in parallel to the second terminals of the unit transistors and that receives the bias current; a common output terminal electrically connected in parallel to the third terminals of the unit transistors and that outputs the amplified signal; and first resistance elements each of which is electrically connected between the common input terminal and the second terminal of a corresponding one of the unit transistors and each of which cuts a DC component of the bias current.

Multi-finger transistor and power amplifier circuit

A power amplifier circuit includes a first power amplifier, a balun, a second power amplifier, and a third power amplifier. The second and third power amplifiers each include unit bipolar transistors each including a first terminal electrically connected to a reference potential, a second terminal, and a third terminal that outputs an amplified signal; a common input terminal electrically connected to the second terminals of the transistors and receives an RF signal; a common bias terminal electrically connected to the second terminals of the transistors and receives a bias current; a common output terminal electrically connected to the third terminals of the transistors and outputs the amplified signal; and resistance elements each of which is electrically connected between the common input terminal and the second terminal of a corresponding one of the transistors and cuts a DC component of the bias current.

Power amplifier circuit

A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.

Power amplifier device

A semiconductor device includes at least one transistor disposed on or in a substrate. The transistor is a bipolar transistor including an emitter, a base, and a collector, or a field-effect transistor including a source, a gate, and a drain. At least one first bump connected to the emitter or the source is disposed on the substrate. Furthermore, at least three second bumps connected to the collector or the drain are disposed on the substrate. In plan view, a geometric center of the at least one first bump is located inside a polygon whose vertices correspond to geometric centers of the at least three second bumps.

Semiconductor device

A power amplifier circuit includes an input-stage power amplifier configured to receive a radio-frequency input signal, an output-stage power amplifier configured to output an amplified radio-frequency output signal, and an intermediate-stage power amplifier disposed between the input-stage power amplifier and the output-stage power amplifier. The intermediate-stage power amplifier includes a first transistor, a second transistor, and a capacitor having a first end connected to an emitter of the first transistor and a second end connected to a collector of the second transistor. The intermediate-stage power amplifier receives a signal at a base of the second transistor thereof and outputs an amplified signal from a collector of the first transistor thereof.

A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.

A power amplifier module includes a first amplifier that amplifies an input signal to generate a first amplified signal and outputs the first amplified signal, a second amplifier that amplifies the first amplified signal to generate a second amplified signal and outputs the second amplified signal, and a matching network disposed between an output terminal of the first amplifier and an input terminal of the second amplifier. The first amplifier is provided on a first chip, and the second amplifier is provided on a second chip. The matching network has an impedance transformation characteristic adjustable in accordance with a control signal.

Power amplifier module

A PA module () includes multiple amplifying elements () and a variable filter circuit (). The amplifying elements () amplify a transmission signal in a frequency range including multiple communication bands and are cascade-connected to each other. The variable filter circuit () is connected between the amplifying elements (). The variable filter circuit () uses a transmission band corresponding to a used communication band selected from the multiple communication bands as a pass band and a reception band corresponding to the used communication band as an attenuation band.

Power amplification module and front end circuit

An isolator includes a core isolator, a main substrate and a circuit-defining section. The main substrate includes a first wiring portion, a second wiring portion and a third wiring portion and has the core isolator and the circuit-defining section mounted thereon. An input port of the core isolator is connected to the first wiring portion. An output port of the core isolator is connected to the second wiring portion. A ground port of the core isolator is connected to the third wiring portion. In the circuit-defining section, a conductor pattern includes a capacitor that is connected in parallel with the core isolator via the first wiring portion and the second wiring portion, and an impedance element that is connected to at least either of the first wiring portion and the second wiring portion.

Isolator

Isolators are disposed such that DC magnetic fields of permanent magnets intensity with each other, and thus, the input impedance of non-reciprocal circuitsand(regulating means) is reduced. Accordingly, the impedance conversion ratio between the output impedance of amplifying meansand the input impedance of the regulating meansis reduced to be relatively small. Thus, by simplifying the configuration of matching meansdisposed between the amplifying meansand the regulating means, the insertion loss of the matching meanscan be reduced, thereby enhancing the efficiency of a circuit module. Additionally, it is possible to dispose the non-reciprocal circuitsandclose to each other so that the DC magnetic fields of the permanent magnets can intensity with each other, thereby increasing the design flexibility of the circuit moduleand accordingly reducing the size of the circuit module

Growing community of inventors

Kyoto, Japan

Shingo Yanagihara