Flosfia Inc.

Kyoto University

Eyetec Co., Ltd.

Shingo Yagyu

Toshimi Hitora

Takashi Shinohe

Takahiro Sasaki

Takuto Igawa

Shizuo Fujita

Tokiyoshi Matsuda

Kentaro Kaneko

Nobuaki Watanabe

Takayuki Uchida

Takashi Tanaka

Masafumi Ono

In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 m&#x3a9;cmor less.

Multilayer structure and method of forming the same

An electrically-conductive member having sufficient corrosion resistivity even when the electrically-conductive member is exposed to high potential environment and a method of manufacturing the electrically-conductive member are offered. An electrically-conductive member is obtained by a mist CVD method, by forming a metal oxide film on a base member of a separator, and the electrically-conductive member has an active potential range and a passive potential range in an anode polarization curve that is measured in a sulfuric acid aqueous solution having a sulfuric acid concentration that is 5.0&#xd7;10mol/dmat pH3 and having a temperature of 25&#xb0; C., an anode current density that is 1&#xd7;10A/cmor less in the passive potential range, and the passive potential range reaching to an electric potential that is 1V.

Electrically-conductive member and method of manufacturing the same

Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 &#x3bc;m or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 &#x3bc;m or less, a thickness in the range of less than &#xb1;50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 &#x3bc;m or less, and has a film surface roughness (Ra) of 0.1 &#x3bc;m or less.

Thermistor film and method of depositing the same

In a first aspect of a present inventive subject matter, a method of forming a film includes turning a raw material containing at least a first chemical element and a second chemical element into atomized droplets; carrying the atomized droplets containing at least the first chemical element and the second chemical element by use of a carrier gas onto an object; and causing a reaction of the atomized droplets to form a film containing at least the first chemical element and the second chemical element on the object. The first chemical element is selected from among elements of Group 14 and elements of Group 15 of the periodic table. The second chemical element is selected from among d-block elements, elements of Group 13 and elements of Group 14 of the periodic table and different from the first chemical element.

Method of forming film

In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an &#x3b5;-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device

Growing community of inventors

Kyoto, Japan

Shingo Yagyu