Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Shingo Tsuchimochi

Akinori Sakakibara

Takanori Kawashima

Shoichiro Omae

Rintaro Asai

Masao Noguchi

Seita Iwahashi

A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.

Semiconductor device

A semiconductor device includes a first insulating substrate and a first semiconductor element joined to the first insulating substrate through the first conductive spacer. The first insulating substrate includes a first insulating layer and a first inner conductive layer disposed at a side of the first insulating layer. The first inner conductive layer includes a surface having a first region and a second region. The second region surrounds the first region and has larger surface roughness than the first region. The first conductive spacer is joined to the first region of the first inner conductive layer through a first junction layer.

Semiconductor device including inner conductive layer having regions of different surface roughness

A semiconductor module may include a plurality of semiconductor elements; and a first power terminal, a second power terminal and a third power terminal electrically connected to the plurality of semiconductor elements. The plurality of semiconductor elements may include at least one upper arm switching element electrically connected between the first power terminal and the second power terminal; and at least one lower arm switching element electrically connected between the second power terminal and the third power terminal. A number of the at least one upper arm switching element may be different from a number of the at least one lower arm switching element.

Semiconductor module and power converter using the same

A semiconductor device may include a first insulated substrate, a first semiconductor chip and a second semiconductor chip disposed on the first insulated substrate, a second insulated substrate opposed to the first insulated substrate with the first semiconductor chip interposed therebetween, and a third insulated substrate opposed to the first insulated substrate with the second semiconductor chip interposed therebetween and located side by side with the second insulated substrate.

A semiconductor device is provided with a first insulated substrate including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, a first semiconductor element disposed on the metal layer on one face of the first insulated substrate, a second insulated substrate including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, a second semiconductor element disposed on one of the metal layers of the second insulated substrate, and an encapsulant encapsulating the first semiconductor element and the second semiconductor element. The metal layer on the other face of the first insulated substrate and the metal layer on the other face of the second insulated substrate are exposed on a first flat surface of the encapsulant.

Semiconductor device including conductive spacer with small linear coefficient

A semiconductor device includes a first semiconductor element, a first heat dissipation plate connected to the first semiconductor element, a sealing body that integrally holds the first semiconductor element and the first heat dissipation plate, and a first terminal that is electrically connected to the first semiconductor element and protrudes from the sealing body. The first heat dissipation plate has an insulating substrate, an inner conductor layer, and an outer conductor layer. The outer conductor layer is exposed on a first main surface of the sealing body. The first terminal protrudes from a first side surface adjacent to the first main surface of the sealing body. On the first main surface of the sealing body, at least one first groove extending in a direction along the first side surface is provided in a range located between the outer conductor layer and the first side surface.

Growing community of inventors

Nagakute, Japan

Shingo Tsuchimochi