Mitsubishi Electric Corporation

Matsushita Electric Industrial Co., Ltd.

Renesas Technology Corp.

Shingo Tomohisa

Shiro Hino

Yuji Abe

Takeharu Kuroiwa

Hiroshi Takada

Masakazu Taki

Takashi Takenaga

Hideyuki Hatta

Taisuke Furukawa

Susumu Matsumoto

Koji Sadamatsu

Yuichi Nagahisa

Kotaro Kawahara

Michinari Yamanaka

Junjiro Sakai

Yasutaka Nishioka

Tomohiro Shinagawa

Takeo Furuhata

Fumio Iwamoto

An object of the present invention is to suppress the passage of bipolar current in a silicon carbide semiconductor device by reducing a voltage applied to a terminal well region during reflux operations. An SiC-MOSFET includes a plurality of first well regions, a second well region, a third well region in a surface layer of a drift layer, the first, second, and third well regions being of a second conductivity type. The third well region is provided on the side of the second well region opposite to the first well regions. A unit cell that includes the first well regions includes a unipolar diode. The SiC-MOSFET includes a source electrode connected to the unipolar diode and the ohmic electrode and not having ohmic connection with the second well region and the third well region.

Silicon carbide semiconductor device and power converter

A semiconductor substrate according to the present invention includes a nitride semiconductor layer, an amorphous semiconductor layerformed on one main surface side of the nitride semiconductor layer, a high-roughness layerwhich is a semiconductor layer formed on the amorphous semiconductor layerand has a surface roughness larger than the amorphous semiconductor layer, and a diamond layerformed on the high-roughness layer. Damage to the nitride semiconductor layer can be reduced in forming the diamond layer on the nitride semiconductor layer and adhesion between the layers can be increased.

Semiconductor substrate

A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

Magnetic field detection device

It is an object to provide a semiconductor device having a buried multilayer wiring structure in which generation of a resolution defect of a resist pattern is suppressed and generation of a defective wiring caused by the resolution defect is reduced. After a via hole () reaching an etching stopper film () is formed, annealing is carried out at 300 to 400&#xb0; C. with the via hole () opened. As an annealing method, it is possible to use both a method using a hot plate and a method using a heat treating furnace. In order to suppress an influence on a lower wiring () which has been manufactured, heating is carried out for a short time of approximately 5 to 10 minutes by using the hot plate. Consequently, a by-product staying in an interface of an upper protective film () and an interlayer dielectric film () having a low dielectric constant and a by-product staying in an interface of the etching stopper film () and the interlayer dielectric film () having a low dielectric constant are discharged so that an amount of the residual by-product can be decreased.

Electronic device manufacturing method

Growing community of inventors

Tokyo, Japan

Shingo Tomohisa