Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kansai Paint Company, Ltd.

Fuji Photo Film Company, Limited

Jfe Steel Corporation

Mitsubishi Hitachi Power Systems, Ltd.

Fujitsu Corporation

Fujifilm Corporation

Subaru Corporation

Mochida Pharmaceutical Co., Ltd.

Mitsubishi Power, Ltd.

Sankio Chemical Co., Ltd.

Jfe Mineral & Alloy Company, Ltd.

Seiko Epson Corporation and Sammy Networks Co., Ltd.

Shingo Sato

Naoki Kikuchi

Tatsuya Nishiwaki

Kentaro Ichinoseki

Yukio Takahashi

Takato Adachi

Shin Kato

Hideaki Katsuta

Goro Okuyama

Satoru Furusawa

Kenta Taniguchi

Yuji Miki

Hideki Okumura

Kenichi Tokano

Atsuko Yamashita

Yoshikazu Matsumura

Yuhki Fujino

Nobuhiko Oda

Yuichi Uchida

Terutaka Takahashi

Ryo Kawabata

Kenji Nakase

Kuniomi Hirano

Koichi Takahashi

Wataru Saito

Morio Yagihara

Tadashi Ikeda

Yusuke Vincent Fujii

Shigeo Hirano

Mitsunori Ono

Seiji Ichijima

Keiichi Adachi

Koki Nakamura

Tatsuya Ohguro

Hideto Mori

Tsutomu Satoh

Hiroaki Katou

Hiroaki Yamashita

Yoshisada Nakamura

Noboru Sasaki

Yoshiharu Takada

Hiro Gangi

Koji Tamoto

Yoshizumi Matsuno

Shotaro Baba

Kohei Oasa

Taiki Kinoshita

Shoji Furusako

Saya Shimomura

Hideo Sugai

Shota Amano

Tsuyoshi Kachi

Kikuo Aida

Katsura Miyashita

Fumio Yamashita

Shinji Koseki

Kenichi Kuwabara

Hideharu Kojima

Tomoyuki Sakuma

Katsunori Nagao

Tomohiro Narumi

Yusuke Fujii

Shizue Matsuda

Akihiro Takahashi

Isamu Ito

Jun-ichi Kayasato

Toshio Shiota

Ippei Higuchi

Yumi Murakami

Yasutaka Ta

Atsuo Yuasa

Hiroyuki Yamamoto

Kazuhiro Itagaki

Kengo Egawa

Atsushi Kamimura

A method for producing low-carbon ferromanganese capable of achieving a high Mn yield. In producing low-carbon ferromanganese by blowing an oxidizing gas from a top-blowing lance onto a bath face of high-carbon ferromanganese molten metal accommodated in a reaction vessel provided with a top-blowing lance and bottom-blowing tuyere to perform decarburization, the slag composition during the blowing is adjusted so that a value of (CaO+MgO)/(AlO+SiO) on a mass basis in the slag composition is not less than 0.4 but not more than 5.0. Also, agitation is performed under a condition that an agitation power density ε of an agitation gas blown through the bottom-blowing tuyere is not less than 500 W/t.

Method for producing low-carbon ferromanganese

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, a connecting member, a first member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region is between the first electrode and the third semiconductor region. The first semiconductor region includes first to third partial regions. The second semiconductor region is between the first and third semiconductor regions. The second semiconductor region includes third and fourth semiconductor portions. The third semiconductor region includes first and second semiconductor portions. The second electrode is electrically connected with the third semiconductor region. The third electrode includes a first electrode portion. The first conductive member includes first to third conductive regions. The connecting member is electrically connected with the first conductive member. The first member is provided between the first electrode portion and the connecting member.

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a semiconductor part including a first semiconductor layer and a second semiconductor layer in contact with the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part; a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part; a gate electrode; an interlayer insulating film electrically insulating the gate electrode and the second electrode on the front surface side of the semiconductor part; and a third semiconductor layer having: a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part; and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction.

Semiconductor device and manufacturing method thereof

There has been demand for an additional method for producing antibodies. The present invention provides: a polymer-coated crosslinked alginate gel fiber in which a core layer containing a crosslinked alginate gel and either antibody-producing cells (e.g., antibody-producing CHO cells) or bioactive-substance-producing cells (e.g., MIN6 cells derived from pancreatic β cells) is coated with a cationic polymer; and a method for producing antibodies, a bioactive substance, etc., using the fiber.

Polymer-coated crosslinked alginate gel fiber

According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Semiconductor device

A top-blowing lance nozzle is configured to freely switch an adequate expansion condition so as to control an oxygen-blowing amount and a jetting velocity independently of each other without requiring a plurality of lance nozzles or a mechanically movable part. A lance nozzle is configured to blow refining oxygen to molten iron charged in a reaction vessel while a gas is blown from a top-blowing lance to the molten iron. One or more blowing holes for blowing a working gas are on an inner wall side surface of the nozzle, at a site where the lance nozzle has a minimum cross-sectional area in a nozzle axis direction or at a neighboring site of the site.

Lance nozzle

According to one embodiment, a semiconductor device includes first and second electrodes, first, fourth, and sixth semiconductor regions of a first conductivity type, a junction region, a fifth semiconductor region of a second conductivity type, and a gate electrode. The junction region includes a second semiconductor region of the first conductivity type and a third second semiconductor region of the second conductivity type. The second semiconductor regions and the third semiconductor regions are alternately provided in a second direction perpendicular to a first direction. A concentration of at least one first element selected from the group consisting of a heavy metal element and a proton in the junction region is greater a concentration of the first element in the fourth semiconductor region, or a density of traps in the junction region is greater than that in the first semiconductor region and greater than that in the fourth semiconductor region.

A probe pin inspection mechanism a includes a base, a pair of movable bodies, a pair of movable-body elastic bodies, and a conductor. The movable bodies are supported by the base to be movable in a first direction from a first position with respect to the base, and respectively include ends and terminals electrically connected to the respective ends. The movable-body elastic bodies elastically press the movable bodies in a second direction. The conductor is supported by the base and electrically connects the terminals of the movable bodies by making contact with the terminals. The state between the terminals and the conductor is switched, according to the position of the movable bodies, between a conductive state in which the terminals and the conductor are in contact with each other and a non-conductive state in which the terminals and the conductor are separated from each other.

Probe pin inspection mechanism and inspection apparatus

Semiconductor device with region of varying thickness

A combustor is provided with a combustion liner () in which a combustion gas flows through the inner peripheral side and a plurality of through-holes () are formed, and a sound attenuator () having a space-forming member () configured to form a space (S) connected to the plurality of through-holes () at the outer peripheral side of the combustion liner (). The space-forming member has a main body having an opening configured to bring an outside and the space in communication with each other, and a lid joined to an outer surface of the main body via a welded portion and configured to protrude outward and close the opening.

Combustor, gas turbine provided with same, and method of repairing combustor

A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g&#xb7;&#x3bc;m&#xb7;cm])/(density of the first metal material [g&#xb7;cm]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g&#xb7;&#x3bc;m&#xb7;cm])/(density of the second metal material [g&#xb7;cm]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode provided on the second solder portion.

A combustor pipe is linked to a vane shroud in which a vane is provided, and includes an inlet, an outlet, an inner pipe of which an inner space is a flow path for passing a combustion gas, a first cooling flow path through which a cooling medium passes being formed inside a wall that forms the flow path; and an outer pipe on an outer circumference of the inner pipe and secured to the inner pipe. A second cooling flow path through which a cooling medium passes and which is connected to the first cooling flow path near the outlet of the combustor pipe is formed between an outer circumferential surface of the inner pipe and an inner circumferential surface of the outer pipe, and a cooling promoting structure is formed on the outer pipe, inside the second cooling flow path near the first cooling flow path.

Combustor pipe, combustor, and gas turbine

A combustor is provided with a combustion liner () in which a combustion gas flows through the inner peripheral side and a plurality of through-holes () are formed, and a sound attenuator () having a space-forming member () configured to form a space (S) connected to the plurality of through-holes () at the outer peripheral side of the combustion liner (). A method of repairing a combustor involves executing: an opening step of opening a portion of the space-forming member () in contact with the outside and bringing the outside and the space (S) in communication with each other; a cylinder repair step of repairing the combustion liner (); a foreign substance removal step of removing foreign substances in the space (S) from the opening () opened in the opening step to the outside, after the cylinder repair step; and a closing step of closing the opening () using a lid (), after the foreign substance removal step.

An apparatus for vehicle-mounted camera calibration includes a floor and a display. An automobile is to be stopped in a predetermined stopping area on the floor. The display is disposed outside the predetermined stopping area on the floor. The display is configured to present a display pattern for calibration of a vehicle-mounted camera mounted in the automobile. The display is configured to change the display pattern in accordance with specifications of the automobile and specifications of the vehicle-mounted camera.

Apparatus for vehicle-mounted camera calibration and method for vehicle-mounted camera calibration

Growing community of inventors

Kanagawa, Japan

Shingo Sato