Yamaha Corporation

Shizuoka University

Nippon Gakki Seizo Kabushiki Kaisha

Shingo Sakakibara

Hiroshi Saitoh

Toshihisa Suzuki

Yoku Inoue

Katsunori Suzuki

Koji Yataka

Yasuro Okumiya

Tadahiko Hotta

Masahiro Sugiura

Yoshiki Terada

Hidenori Mimura

A strain sensor provided with a substrate that has flexibility; a carbon nanotube (CNT) film that is provided on the surface of the substrate and that has a plurality of CNT fibers oriented in one direction; and a pair of electrodes that are arranged at both ends in the orientation direction of the CNT fibers in the CNT film; in which the CNT film has a plurality of CNT fiber bundles that consist of the plurality of CNT fibers, and a resin layer that covers the peripheral surface of the plurality of the CNT fiber bundles and joins with the surface of the substrate.

Strain sensor

A strain sensor includes a flexible substrate, a CNT film made of a plurality of CNT fibers aligned in an orientation direction, a pair of electrodes, and a protective coat. The electrodes are formed at the opposite ends of the CNT film in a perpendicular direction to the orientation direction of the CNT fibers. The protective coat protecting the CNT film is made of a resin, a water-based emulsion, or an oil-based emulsion. The protective coat is placed in contact with at least part of the CTN fibers on the surface of the CNT film. The strain sensor including the protective coat is able to prevent damage/breakage of the CNT film and to prevent foreign matters from entering into gaps between CNT fibers, thus improving durability in maintaining adequate sensing functionality.

Flexible strained sensor with protective coating

A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate. The substrate and the lid can be accurately positioned.

Semiconductor device and manufacturing method thereof

A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.

Heteroepitaxial growth method for gallium nitride

A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.

Semiconductor device

A method of manufacturing a semiconductor device manufactures a semiconductor device provided with plural kinds of Schottky barrier diodes having different forward voltages on one substrate. The method includes (a) a step of forming at least one Schottky barrier diode of a first kind, and (b) a step of forming at least one Schottky barrier diode of a second kind. The step (a) is performed by placing a first metal layer at a first surface part of a silicon substrate, and then by silicifying the first metal layer. The step (b) is performed by plating, at a second surface part of the silicon substrate which is different from the first surface part of the silicon substrate, a second metal layer which consists of a metal different from the metal consisting of the first metal layer and then by silicifying the second metal layer. Thus a semiconductor device provided with plural kinds of Schottky barrier diodes having different forward voltages on one substrate which is suitable for STL (Schottky Transistor Logic) etc. is obtained.

Growing community of inventors

Hamamatsu, Japan

Shingo Sakakibara