Daikin Industries, Ltd.

Shingo Nakamura

Yuusuke Etou

Mitsushi Itano

Takehiko Kezuka

Tatsuya Ohtsuka

Kanako Fukumoto

Hirokazu Aoyama

Yoshinori Tanaka

Masahiro Higashi

Takashi Kanemura

Seiji Takubo

Fumihiro Kamiya

Masato Naitou

Katsuya Nakai

Keisuke Tano

Daisuke Watanabe

Masataka Hirose

In the presence of a catalyst and a cycloalkane compound represented by formula (3): wherein R, R, R, R, R, R, R, and Rare the same or different and each is a halogen atom, an alkyl group, or a fluoroalkyl group; an alkene compound represented by formula (2): wherein X, X, R, and Rare as defined above; is reacted with a hydrogen-containing gas to hydrogenate the alkene compound represented by formula (), whereby an alkane compound represented by RCHXCHXR, wherein Xand Xare the same or different and each is a halogen atom, and Rand Rare the same or different and each is an alkyl group or a fluoroalkyl group; can be synthesized in such a manner that (S),(R)-isomer, (R),(R)-isomer, and (S),(S)-isomer are co-produced.

Method for producing alkane compound

An object of the present disclosure is to provide a method for dehydrating a composition containing a fluorine-based hydrocarbon compound, such as HFC-134a. The dehydration method includes the step of bringing a composition containing a fluorine-based hydrocarbon compound into contact with a zeolite.

Dehydration method for fluorine-based hydrocarbon compound

A halogenated alkene compound and a fluorinated alkyne compound are obtained at a high conversion rate and high selectivity by employing any of the following methods (1) to (4):

Methods for producing halogenated alkene compound and fluorinated alkyne compound

An object of the present invention is to provide a composition containing fluoromethane having high purity. A method for producing fluoromethane, comprising: pyrolyzing in a gas phase a fluorine-containing methyl ether represented by Formula (1): wherein Rand Rare the same or different, and each represents an optionally substituted linear or branched monovalent aliphatic hydrocarbon group, an optionally substituted monovalent aromatic hydrocarbon group, an optionally substituted monovalent cyclic aliphatic hydrocarbon group, hydrogen, or halogen, in the presence of an alumina catalyst to thereby obtain a mixed gas containing fluoromethane and acid fluoride, wherein: the alumina catalyst contains chlorine in an amount of 1.0 wt % or less.

Composition including fluoromethane and method for producing same

A method for producing methyl fluoride, comprising the steps of: (1) pyrolyzing a starting compound in a gas phase to thereby obtain a mixed gas containing methyl fluoride and acid fluoride; and (2) rectifying the mixed gas obtained in step (1) to thereby obtain methyl fluoride.

Methyl fluoride production method

Provided is a method for producing fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride ((CF)CHCOF), which are useful as dry etching gases etc., safely and inexpensively with high purity. According to the method in which 1,1,3,3,3-pentafluoro-2-trifluoromethylpropyl methyl ether is pyrolyzed in a gas phase in the presence of a catalyst, the desired fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride can be obtained with high selectivity and high conversion of the starting material by a simple process in which a pyrolysis reaction is performed in a gas phase using the inexpensive starting material.

Method for producing dry etching gas

An object of the present invention is to extend the catalyst lifetime in a method for producing fluoromethane by pyrolyzing fluorine-containing methyl ether in the presence of a catalyst. The present invention provides a method for producing fluoromethane by pyrolyzing a fluorine-containing methyl ether represented by Formula (1) in a gas phase in the presence of a catalyst, 

Method for producing fluorinated methane

An object of the present invention is to provide a method for producing methane fluoride that is useful, for example, as a dry etching gas, the method being more suitable for industrial production. To achieve this object, the present invention provides a method including reacting (A) dimethyl sulfate and (B) at least one fluorocompound in a liquid phase, the fluorocompound (B) being at least one compound selected from the group consisting of hydrogen fluoride and hydrofluoric acid salts, or a metal fluoride, wherein when the fluoride compound (B) includes hydrogen fluoride or a hydrofluoric acid salt, the reaction is carried out without a solvent or using a polar solvent as a solvent, and when the fluoride compound (B) is a metal fluoride, the reaction is carried out using water as a solvent.

Method for manufacturing methyl fluoride

An etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.

Etching solution

A residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the residue-removing solution comprising a Cu surface protective agent including: at least one compound selected from compounds (1), (2) and (3) each having as a basic skeleton a five-membered or six-membered heteratomic structure as defined herein; a compound capable of forming a complex or chelate with Cu (copper); and water. Further, the residue-removing solution has a pH of 4 to 9.

Solution for removing residue after semiconductor dry process and method of removing the residue using the same

The present invention provides a residue-removing solution for use after a dry process, the residue-removing solution being capable of preventing minute cracks on a Cu surface, which has heretofore been unresolved with known polymer-removing solutions; and a method for manufacturing semiconductor devices using the residue-removing solution. More specifically, the invention relates to a residue-removing solution for removing residues present on semiconductor substrates after dry etching and/or ashing, the solution containing water and at least one component selected from the group consisting of (a) a keto acid, (b) a keto acid salt, and (c) an aldehyde acid salt; and a method for removing residues using the residue-removing solution.

A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution.

Solution for removal of residue after semiconductor dry process and residue removal method using same

A dry etching gas that comprises a compound having a CFCF fragment directly bonded to a double bond (provided that the compound is exclusive of CFCF&#x2550;CFCF&#x2550;CF). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.

Dry etching gas and method for dry etching

The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.

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Osaka, Japan

Shingo Nakamura