Nichia Corporation

Shingo Masui

Yusaku Achi

Ryosuke Wakaki

Tomonori Morizumi

Hiroto Itoi

Ken Katsuragi

Shinya Sonobe

Yasuhiro Kawata

Kazutaka Tsukayama

Atsuo Michiue

Shingo Tanisaka

Hideyuki Fujimoto

Takashi Miyoshi

Tsuyoshi Hirao

A backlight unit includes a light-guide plate, a light source, and a phosphor sheet including a red phosphor material. The light source includes blue light emitting diodes, and green semiconductor lasers. The red phosphor material is excited by light from the blue light emitting diodes and emits red light. The phosphor sheet is solid and disposed on a surface of a first principal plane of the light-guide plate to define a first mixing light emission surface on the first principal plane of the light-guide plate from which green light emitted from the green semiconductor lasers and blue light from the blue light emitting diodes are emitted toward the phosphor sheet and a second mixing light emission surface on the phosphor sheet from which red light emitted from the red phosphor material, green light emitted from the green semiconductor lasers, and blue light from the blue light emitting diodes are emitted.

Backlight unit and method of lighiting backlight unit

A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths. The red phosphor material is included in a phosphor sheet, and the phosphor sheet is disposed on a surface of the light-guide plate.

Backlight unit and liquid crystal display device

A method of manufacturing a light emitting device includes: providing a wafer including a conductive first substrate, a laser element structure on an upper side of the first substrate, and an upper surface electrode on an upper surface of the element structure; bonding the wafer to a second substrate at an upper surface electrode side of the wafer; removing a portion of the first substrate to reduce a thickness of the wafer; forming a lower surface electrode on a lower surface of the first substrate at which the removing of the portion of the first substrate has been performed; singulating the wafer to obtain a laser element; and mounting the laser element on a submount such that the lower surface electrode faces the submount.

Method of manufacturing light emitting device and light emitting device

A backlight unit has a light-guide plate and a light source optically coupled with the light-guide plate, with which light is input from a plane of the light-guide plate and white-light is output from the first principal plane of the light-guide plate. The light source has a plurality of blue light emitting diodes, red phosphor material excited by light from the blue light emitting diodes and emits red light, and a plurality of green semiconductor lasers having emission peaks at green light wavelengths.

A nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer. The active layer includes well layers, and at least one barrier layer provided between the well layers. The barrier layer includes a barrier layer having band gap energy higher than that of an n-side optical guide layer. The p-type semiconductor layer includes an electron barrier layer having band gap energy higher than that of all barrier layers comprised in the active layer. A p-side optical guide layer includes a first region disposed on a side of a final well layer and having band gap energy lower than that of the n-side optical guide layer, and a second region disposed on a side of the electron barrier layer and having band gap energy higher than that of the n-side optical guide layer.

Nitride semiconductor laser element

The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser elementA and a support member. The semiconductor laser elementincludes a first electrode, a substrate, and a semiconductor structurehaving an emitting facet and a reflecting facet, a second electrode, and a pad, in this order. The semiconductor laser elementA is connected to a support memberat its padside via a connecting member. The emitting-side end portion of the second electrodeis spaced apart from the emitting facet of the semiconductor structure, and the emitting-side end portion of the padis located at an outer side than the emitting-side end portion the second electrode

Semiconductor laser device

To realize a nitride semiconductor laser element having improved internal quantum efficiency. The nitride semiconductor laser element includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer; wherein the n-type semiconductor layer includes an n-side optical guide layer; wherein the active layer includes two or more well layers, and at least one barrier layer provided between the well layers; wherein the barrier layer includes a barrier layer having band gap energy higher than that of the n-side optical guide layer; wherein the p-type semiconductor layer includes: an electron barrier layer having band gap energy higher than that of all barrier layers included in the active layer, and a p-side optical guide layer provided between a final well layer, that is a well layer nearest to the p-type semiconductor layer of the two or more well layer, and the electron barrier layer; and wherein the p-side optical guide layer includes: a first region that is disposed on a side of the final well layer and has band gap energy lower than that of the n-side optical guide layer, and a second region that is disposed on a side of the electron barrier layer and has band gap energy higher than that of the n-side optical guide layer.

To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.

Semiconductor laser element

A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.

A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator, the groove is embedded with a first embedded layer composed of a dielectric on the cavity end face side, and with a conductive layer on the inside.

A nitride semiconductor laser element includes a laminate. The laminate includes on a substrate a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer, and constitutes a cavity resonator. The laminate includes an element region, an exposed region and an island layer. The element region is a region in which the laser element is formed. The exposed region is a region in which at least the first conductivity type nitride semiconductor layer is exposed on both sides of the element region in the cavity direction, and which is provided continuously in a cavity resonating direction of the laser element. The island layer is separated from the element region by the exposed region, and that is disposed in a corner of the nitride semiconductor laser element.

A semiconductor laser element having; a substrate, a semiconductor layer laminated a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer in that order on the substrate, a stripe-like ridge formed on the upper face of the second conductivity type semiconductor layer, a conductive oxide layer formed on the upper face of the ridge, a dielectric layer, with a refractive index that is lower than the refractive index of the semiconductor layer, formed on the side faces of the ridge, and a metal layer formed so as to cover the conductive oxide layer and the dielectric layer, the surface of the conductive oxide layer is exposed from the dielectric layer, and the side faces of the conductive oxide layer are sloped with respect to the upper face of the ridge, and the inclination angle of the side faces of the conductive oxide layer with respect to the normal direction is greater than the inclination angle of the side faces of the ridge with respect to the normal direction.

Semiconductor laser element and method of manufacturing thereof

A method for manufacturing a nitride semiconductor laser element, which has over a substrate a laminate including an element region constituting a cavity, an island layer separated from the element region, an exposed region separating the element region from the island layer, and an auxiliary groove provided along an end face of the cavity, and with which the cavity end face is obtained by dividing the laminate and the substrate along the first auxiliary groove, the method comprises a step of: forming the laminate over the substrate; removing part of the laminate to separate the laminate into the element region and the island layer and to form the exposed region provided continuously in the cavity direction of the nitride semiconductor laser element; forming the first auxiliary groove so as to be adjacent to the island layer; and dividing so that the island layer is disposed in a corner of the nitride semiconductor laser element to obtain a nitride semiconductor laser element.

Method for manufacturing a nitride semiconductor laser element and a nitride semiconductor laser element

A nitride semiconductor laser element comprises a nitride semiconductor substrate and a nitride semiconductor layer laminated thereon, wherein the nitride semiconductor substrate has a high dislocation density region and a low dislocation density region containing lower dislocation than that of the high dislocation density region, and has at least one recess formed in at least the high dislocation density region, the nitride semiconductor layer has a first nitride semiconductor layer in which the grown film thickness in the lateral direction from the side faces of the recess in the substrate is greater than the grown film thickness in the heightwise direction from a region other than the recess, and a second nitride semiconductor layer that is disposed on the first nitride semiconductor layer and contains indium, and the first nitride semiconductor layer and second nitride semiconductor layer have recess over the recess in the nitride semiconductor substrate.

Nitride semiconductor laser element having nitride semiconductor substrate and nitride semiconductor layer laminated thereon with nitride semiconductor substrate and nitride semiconductor layer having recesses formed in high dislocation density region of nitride semiconductor substrate and nitride semiconductor layer having portions with different film thicknesses

A nitride semiconductor laser element, comprises a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate, wherein recessed and raised portions are formed in the first semiconductor layer and/or the second semiconductor layer, a semiconductor layer that embeds the recessed and raised portions are formed on the semiconductor layer in which said recessed and raised portions are formed, the semiconductor layer in which the recessed and raised portions are formed is equipped with a side face having a first region extending downward and a second region extending farther downward continuously from the first region, and the second region has a greater slope with respect to the normal direction of the substrate than the first region.

Growing community of inventors

Tokushima, Japan

Shingo Masui