Tokyo Electron Limited

Shingo Maku

Hitoshi Kato

David L O'Meara

Hiroyuki Kikuchi

Takeshi Kumagai

Koichi Orito

Hitoshi Katoh

Jinsu Lee

A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

Method and control system for treating a hafnium-based dielectric processing system

A CVD apparatus () forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber () to accommodate a target substrate (W), a support member () to support the target substrate in the process chamber, a heater () to heat the target substrate supported by the support member, an exhaust section () to vacuum-exhaust the process chamber, and a supply section () to supply a gas into the process chamber. The supply section includes a first circuit () to supply a first gas of a silane family gas, a second circuit () to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit () to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

CVD method and device for forming silicon-containing insulation film

A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

Method of CVD for forming silicon nitride film on substrate

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Shingo Maku