Sharp Kabushiki Kaisha Corporation

Shingo Kawashima

Tetsuo Kikuchi

Hajime Imai

Hideki Kitagawa

Tohru Daitoh

Masahiko Suzuki

Hisao Ochi

Tetsuo Fujita

Shinya Tanaka

Atsuhito Murai

Yukinobu Nakata

Yoshiharu Kataoka

Jun Nishimura

Shogo Nishiwaki

Takafumi Shimatani

Masaharu Akitomo

Kenji Takii

Hiroyuki Kaigawa

Koji Matsuoka

Takamichi Honma

Yukihiko Nishiyama

Takayuki Urabe

Toru Daito

A semiconductor device (A) is provided with: a gate electrode (); an oxide semiconductor layer (); a thin-film transistor () including a gate insulating layer (), a source electrode (S), and a drain electrode (D); an inter-layer insulating layer () arranged so as to cover the thin-film transistor () and come into contact with a channel area () of the thin-film transistor (); and a transparent electroconductive layer () arranged on the inter-layer insulating layer (), the source electrode (S) and the drain electrode (D) each having a copper layer (), and the device being further provided with a copper oxide film () arranged between the source and drain electrodes and the inter-layer insulating layer (). The inter-layer insulating layer () covers the drain electrode (D) with the copper oxide film () interposed therebetween. The transparent electroconductive layer () is directly connected to the copper layer () of the drain electrode (D) inside a contact hole (CH) formed in the inter-layer insulating layer (), without the copper oxide film () being interposed therebetween.

Semiconductor device formed by oxide semiconductor and method for manufacturing same

A semiconductor device includes a substrate and a thin film transistor supported by the substrate. The thin film transistor includes a gate electrode, an oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, and source and drain electrodes electrically connected to the oxide semiconductor layer. The gate insulating layer includes a first portion which is covered with the oxide semiconductor layer and a second portion which is adjacent to the first portion and which is not covered with any of the oxide semiconductor layer, the source electrode and the drain electrode. The second portion is smaller in thickness than the first portion, and the difference in thickness between the second portion and the first portion is more than 0 nm and not more than 50 nm.

Semiconductor device, and manufacturing method for same

A semiconductor device () is provided with a thin film transistor including an oxide semiconductor layer (), a gate electrode (), a gate insulating layer (), and a source electrode () and a drain electrode () that are in contact with the oxide semiconductor layer, at least one electrode of the source electrode (), the drain electrode (), and the gate electrode () has a multilayer structure that includes a first layer (A,A) containing copper and a second layer (B,B) containing titanium or molybdenum, the thickness of the first layer (A,A) is more than the thickness of the second layer (B,B), when the source electrode () or the drain electrode () has the multilayer structure, the second layer is arranged on the oxide semiconductor layer side of the first layer so as to be in contact with the surface of the oxide semiconductor layer (), when the gate electrode () has the multilayer structure, the second layer is arranged on the substrate () side of the first layer, and the thickness of the second layer is 15 nm or more and 25 nm or less.

Semiconductor device and method for manufacturing the same

A semiconductor device (A) includes a substrate () and a thin film transistor () supported by the substrate. The thin film transistor includes a gate electrode (), an oxide semiconductor layer (), a gate insulating layer (), a source electrode () and a drain electrode (). The oxide semiconductor layer includes an upper semiconductor layer () which is in contact with the source electrode and the drain electrode and which has a first energy gap, and a lower semiconductor layer () which is provided under the upper semiconductor layer and which has a second energy gap that is smaller than the first energy gap. The source electrode and the drain electrode include a lower layer electrode () which is in contact with the oxide semiconductor layer and which does not contain Cu, and a major layer electrode () which is provided over the lower layer electrode and which contains Cu. An edge of the lower layer electrode is at a position ahead of an edge of the major layer electrode.

Semiconductor device and method for producing same

A semiconductor device () includes: a substrate (); and a thin film transistor () supported on the substrate, the thin film transistor including a gate electrode (), an oxide semiconductor layer (), a gate insulating layer () provided between the gate electrode and the oxide semiconductor layer, and a source electrode () and a drain electrode () electrically connected to the oxide semiconductor layer, wherein: the drain electrode is shaped so as to project toward the oxide semiconductor layer; a width Wand a width Wsatisfy a relationship |W&#x2212;W|&#x2264;1 &#x3bc;m, where the width Wis a width of the oxide semiconductor layer in a channel width direction of the thin film transistor, and the width Wis a width of the drain electrode in a direction perpendicular to a direction in which the drain electrode projects; and the width Wand the width Ware 3 &#x3bc;m or more and 6 &#x3bc;m or less.

Semiconductor device

A semiconductor device (A) includes: a substrate (); a thin film transistor () whose active layer is an oxide semiconductor layer; at least one metal wiring layer including copper (S,D); a metal oxide film including copper () arranged on an upper surface of the at least one metal wiring layer (S,D); an insulating layer () covering at least one metal wiring layer with the metal oxide film () interposed therebetween; and a conductive layer () in direct contact with a portion of the at least one metal wiring layer, without the metal oxide film () interposed therebetween, in an opening formed in the insulating layer ().

Semiconductor device and production method therefor

A semiconductor device (A) according to the present invention includes: a thin-film transistor (); a first insulating layer () which has been formed over the thin-film transistor (); a second insulating layer () which has been formed on the first insulating layer () and which has a hole (); and an opaque layer () which is arranged so as to overlap an oxide semiconductor layer () when viewed along a normal to the substrate (). The opaque layer () has been formed in the hole (). The opaque layer () has a raised and curved upper surface and the upper surface of the second insulating layer () is located closer to the substrate () than the upper surface of the opaque layer () is.

Semiconductor device, method for manufacturing semiconductor device, and liquid crystal display device

A touch panel includes an insulating substrate, a transparent touch electrode provided on the insulating substrate, and a frame portion connected to a periphery of the touch electrode. The touch panel detects a touched position on the touch electrode based on an electric signal through the frame portion. The frame portion is provided between the insulating substrate and the touch electrode.

Touch panel, display device and touch panel manufacturing method

A color filter frame, which covers a non-display surface of an optical display section, is provided with frame color filter picture elements using at least two of three colors used for color filter picture elements, which correspond to displaying pixels. An area ratio of the frame color filter picture elements corresponding to different colors is set so as to be different from that of the color filter picture elements, which correspond to the colors used in the frame color filter picture elements. With this arrangement, it is possible to omit the step of manufacturing a black mask so as to reduce the cost; consequently, a color filter for an optical display device can be provided with an excellent appearance on a display.

Growing community of inventors

Sakai, Japan

Shingo Kawashima