Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Other

Shingo Kanamitsu

Shinichi Ito

Soichi Inoue

Masamitsu Itoh

Kyoko Izuha

Keiko Morishita

Hideki Kanai

Takashi Hirano

Katsuya Okumura

Kazuya Fukuhara

Yuichiro Yamazaki

Motosuke Miyoshi

Kazuyoshi Sugihara

Makoto Sekine

Hideaki Sakurai

Takayuki Sakai

Ichiro Mori

Kosuke Takai

Mana Tanabe

Fumiaki Shigemitsu

Noriko Sakurai

Mitsuyo Asano

A template according to the present embodiment is a template used in a lithography process of a semiconductor manufacturing process. A first substrate includes a first face, a second face protruded from a portion of the first face, and a lateral face being a lateral face positioned between the second face and the first face and inclined with respect to the second face at a connection portion to the second face. A first material film is provided at least on the lateral face.

Template, manufacturing method of template

A template manufacturing method includes preparing a structure including a first substrate and a stacked body that is provided on the first substrate, the stacked body including a first lower layer including a first material, a first upper layer provided on the first lower layer including a second material different from the first material, and a first cover layer provided on a first cover region of the first upper layer and including a third material different from the second material. The method further includes forming a first resist layer on a portion of the first cover layer and on a first portion of the first upper layer, and exposing a second portion of the upper layer. The method yet further includes removing the second portion of the first upper layer using the first cover layer and the first resist layer as a mask.

Template manufacturing method and template base member

A method of manufacturing a replica template includes preparing a substrate including a first protruding portion protruding from a first surface of the substrate and having a patterning surface thereon, forming a first mask pattern over the patterning surface, the first mask pattern comprising a convex portion having a smaller width than the patterning surface and a pattern disposed on the convex portion, removing a portion of the first protruding portion using the first mask pattern as a mask to produce a second protruding portion on the first protruding portion, and forming a pattern in the patterning surface on the second protruding portion by transferring the shape of the pattern of the first mask pattern into the patterning surface on the second protruding portion.

Manufacturing method of replica template, manufacturing method of semiconductor device, and master template

A mask includes a plurality of line patterns provided on a substrate, the plurality of line patterns each including a line comprising a plurality of first layers and a plurality of second layers alternately stacked on the substrate. The lines of the plurality of line patterns extend in a first direction and the lines of the plurality of line patterns are spaced in a second direction crossing the first direction. A line of one of the plurality of line patterns has a first portion and a second portion on a side of the first portion in the first direction, the first portion wider than the second portion in the second direction.

Mask and manufacturing method of mask

In a pattern formation method according to an embodiment, a resist pattern is formed on a first film formed on a substrate. In the process for forming the resist pattern, the resist pattern includes a first pattern including a defect in a predetermined region on the first film. Next, a second film is accumulated on the first pattern in the predetermined region. Furthermore, a second pattern is formed in the first film with the resist pattern and the second film. Then, a third pattern is formed in the predetermined region on the first film.

Pattern formation method, control device, and semiconductor device manufacture method

According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device

According to one embodiment, in a method of repairing a defect on a template substrate for imprint lithography using a charged particle beam, a drift correction mark to correct drift of the charged particle beam is formed on the template substrate. The defect on the template substrate is repaired while correcting the drift of the charged particle beam with reference to the drift correction mark. The drift correction mark is removed.

Method of repairing defect and method of manufacturing semiconductor device

According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An impurity is introduced into an upper layer portion of a partial region of a peripheral portion of the mesa region. The mask film is provided on the upper surface of the substrate.

Template substrate, method for manufacturing same, and template

According to one embodiment, a photomask includes a mask substrate transparent to light, a light shielding pattern formed on the mask substrate, and a thin film portion that is provided at a part of the light shielding pattern and is thinned to have a higher light transmittance than the light shielding pattern, in which the thin film portion is arranged with respect to a light shielding pattern that is sensitive to a focus shift so that a sensitivity becomes stable and is not arranged with respect to a light shielding pattern whose sensitivity to a focus shift is stable.

Photomask and pattern forming method

In a pattern evaluation method of determining whether a pattern formed on a photomask is acceptable, an aberration parameter of an image quality evaluation apparatus for determining a pattern image intensity in transferring a pattern formed on a photomask onto a wafer is acquired. An acceptance criterion value used in determining whether an abnormal pattern of the photomask including the effect of aberration of the image quality evaluation apparatus is acceptable is set through a lithographic simulation using the acquired aberration parameter. Then, using the image quality evaluation apparatus, an image intensity of the abnormal pattern of the photomask and an image intensity of a normal pattern corresponding to the abnormal pattern are obtained. It is determined whether the difference between the two acquired image intensities is within the set acceptance criterion value.

Pattern evaluation method

According to an aspect of the present invention, there is provided a method for correcting a defect in an EUV mask, the method including: preparing an EUV mask including an absorption layer and an anti-reflection layer forming a pattern; recognizing a defect region in the pattern; defining a first region and a second region on the defect region, the second region extending from a desired pattern edge by a given distance, the first region being defined on the rest; removing the first region of the anti-reflection layer and the absorption layer by irradiating a beam in a first atmosphere; removing the second region of the anti-reflection layer and the absorption layer by irradiating the beam in a second atmosphere; and oxidizing an exposed side surface of the desired pattern edge of the absorption layer.

Defect correction method for EUV mask

According to an aspect of the invention, there is provided a white defect repairing method of a photomask which repairs a white defect present at an edge portion of a pattern of the photomask, the method including forming a groove or a hole having a tilted side wall which inhibits passage of exposure light at a position corresponding to that of the white defect on a translucent substrate of the photomask.

White defect repairing method and apparatus of photomask, manufacturing method of photomask, and manufacturing method of semiconductor device

Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

Growing community of inventors

Kawasaki, Japan

Shingo Kanamitsu