Sanyo Electric Co., Ltd.

Sanyo Electric Oc., Ltd.

Shingo Kameyama

Masayuki Hata

Yasuhiko Nomura

Ryoji Hiroyama

Hitoshi Hirano

Masayuki Shono

Daijiro Inoue

Takenori Goto

Kazushi Mori

Tatsuya Kunisato

Kunio Takeuchi

Yoshiki Murayama

Shigeyuki Okamoto

Kiyoshi Oota

Koutarou Furusawa

Koji Tominaga

Noriaki Matsuoka

Kyoji Inoshita

Hiroyuki Yukawa

This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m&#xd7;&#x3bb;/(2&#xd7;n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is &#x3bb; and a refractive index of the dielectric layer is n, and at least 1 &#x3bc;m.

Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same

A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device () includes a semiconductor element layer () having a light emitting layer (), a first cavity facet () formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film () in which a first nitride film (), a first intermediate film including a first oxide film () and a second nitride film () are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (), formed on the first insulating film, including a second oxide film ().

Semiconductor laser device

One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

Nitride based semiconductor laser device with oxynitride protective films on facets

One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

Nitride based semiconductor laser device with oxynitride protective coatings on facets

In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.

In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.

A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.

Light emitting device and method for manufacturing the same

A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

Semiconductor laser device and method of fabricating the same

The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (&#x3bc;m) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas:L&#x2266;0.65&#x2267;2&#xd7;10&#x2266;6.0317&#x2212;10.3525.0516(&#x2212;0.85)/0.44+(&#x2212;0.41)/0.39&#x2266;1

Growing community of inventors

Ibaraki, Japan

Shingo Kameyama