Sumitomo Bakelite Company Limited

Hitachi Chemical Company, Ltd.

Shin-kobe Electric Machinery Co., Ltd.

Shingo Itoh

Hiroshi Haruna

Shinichi Zenbutsu

Takanori Kajimoto

Tadashi Yoshiura

Manabu Ochida

Youhei Itoh

A lithium-ion battery with high safety is provided. A lithium-ion batteryincludes an electrode group, an electrolyte, and a battery containerthat contains the electrode groupand the electrolyte. The electrode groupis formed by stacking a positive electrode and a negative electrode via a separator. The positive electrode contains a composite oxide of lithium, nickel, manganese, and cobalt as a main positive active material. The negative electrode contains amorphous carbon as a main negative active material. The lithium-ion batteryhas a discharge capacity of 20 Ah or more. The ratio (the value of Y/X) of a volume Y occupied by the electrolyte to a volume X of a void space in the battery containeris 0.65 or more.

Lithium-ion battery

A semiconductor device includes a semiconductor element that is mounted on a substrate, an electrode pad that contains aluminum as a main component and is provided in the semiconductor element, a copper wire that contains copper as a main component and connects a connection terminal provided on the substrate and the electrode pad, and an encapsulant resin that encapsulates the semiconductor element and the copper wire. When the semiconductor device is heated at 200&#xb0; C. for 16 hours in the atmosphere, a barrier layer containing any metal selected from palladium and platinum is farmed at a junction between the copper wire and the electrode pad.

Semiconductor device and method of manufacturing the same

There is provided a semiconductor device having excellent moisture resistance and high temperature storage properties. The semiconductor device includes a lead frame that has a die pad and an inner lead, as a substrate, a semiconductor element that is mounted on the die pad, an electrode pad that is provided in the semiconductor element, a copper wire that connects the inner lead provided on the substrate and the electrode pad, and an encapsulant resin that encapsulates the semiconductor element and the copper wire. A region of the electrode pad disposed within a range of at least equal to or less than 3 &#x3bc;m from a junction surface with the copper wire in a depth direction includes a metal, which is less likely to be ionized than aluminum, as a main component, and a content of sulfur in the copper wire is equal to or more than 15 ppm and equal to or less than 100 ppm with respect to a total amount of the copper wire.

Semiconductor device

An epoxy resin composition for semiconductor encapsulation of the present invention contains an epoxy resin (A) and a curing agent (B) and is used to encapsulate a copper wire () and a semiconductor element () connected to this copper wire (). This epoxy resin composition is such that when a cured product of the epoxy resin composition is heated for 10 hours at 200&#xb0; C., the amount of generation of a first corrosive gas that is a sulfur compound having corrosiveness to the copper wire () is less than or equal to 70 ppm.

Epoxy resin composition for semiconductor encapsulation, cured product thereof, and semiconductor device

A nonaqueous electrolyte and a lithium ion battery with reduced temporal variations in battery characteristics from initial values are provided. A mixed solution is prepared by dissolving a lithium salt such as LiPFin a nonaqueous solvent such as ethylene carbonate. Allylboronate ester and siloxane are mixed with the mixed solution. The content of the allylboronate ester is 1 wt % or less. The content of the siloxane is 2 wt % or less. 2-Allyl-4,4,5,5-tetramethyl-1,3,2-dioxaborolane is used as the allylboronate ester. At least one kind selected from hexamethyldisiloxane and 1,3-divinyltetramethyldisiloxane is used as the siloxane.

Nonaqueous electrolyte solution and lithium ion battery

A semiconductor device is configured that two or more semiconductor elements are stacked and mount on a lead frame, the aforementioned lead frame is electrically joined to the semiconductor element with a wire, and the semiconductor element, the wire and an electric junction are encapsulated with a cured product of an epoxy resin composition for encapsulating semiconductor device, and that the epoxy resin composition for encapsulating semiconductor device contains (A) an epoxy resin; (B) a curing agent; and (C) an inorganic filler, and that the (C) inorganic filler contains particles having particle diameter of equal to or smaller than two-thirds of a thinnest filled thickness at a rate of equal to or higher than 99.9% by mass.

An epoxy resin composition for encapsulating a semiconductor element and a semiconductor device manufactured using the epoxy resin composition are provided. The epoxy resin composition includes epoxy resin, a curing agent, at least one kind of an inorganic filler selected from the group consisting of silicates such as talc and calcined clay, oxides such as silica and fused silica, and hydroxides such as aluminum hydroxide and magnesium hydroxide, and a pH buffer agent having a pH buffer area of pH 4 to 8. Further, the semiconductor device is manufactured by encapsulating at least one semiconductor element with a cured product of the above epoxy resin composition. Such a semiconductor device can have excellent moisture resistance.

Growing community of inventors

Tokyo, Japan

Shingo Itoh