Mitsui Minings & Melting Co., Ltd.

Kyushu University

Mitsui Mining & Smelting Co., Ltd.

Shingo Ide

Yasuhisa Izutsu

Isamu Yashima

Yasunori Tabira

Haruki Matsuo

Rintaro Ishii

Yusuke Shiro

Yuichi Anno

Koichi Suematsu

Yuya Komori

Atsuro Sumiyoshi

Tokiharu Oyama

Ken Watanabe

Kengo Shimanoe

Kenji Kume

Minoru Kahata

Jun Omura

Kohei Kato

Nan Ma

Sakiko Yabu

Provided is a gas concentration measuring device including a heat generating resistor that generates heat when electricity is supplied and a stage supporting the resistor. The resistor and the stage overlap in plan view. The stage has a plan view area S of 3.6×10μmor less. The ratio of the area S to the total volume V of the heat generating resistor and the stage, S/V, ranges from 0.0010 to 10 μm. The device is configured to measure an oxygen gas concentration in a sample gas on the basis of the resistance of the heat generating resistor.

Gas concentration measuring device and method for measuring concentration of analyte gas in sample gas

A solid electrolyte assembly includes a substrate, a solid electrolyte, and a first electrode and a second electrode. The solid electrolyte has oxide ion conductivity, and the first electrode is located under the solid electrolyte and contains a porous material. The first electrode has only one oxygen diffusion path that is formed overlapping the substrate and the solid electrolyte. When Sr represents the smallest cross-sectional area that is a cross-sectional area of the oxygen diffusion path at a location where the area of a cross section of the first electrode taken perpendicularly to an oxygen diffusing direction is smallest in a portion of the oxygen diffusion path where the oxygen diffusion path overlaps the substrate and the solid electrolyte in a plan view of the solid electrolyte assembly, and Sp represents the area of a region where the first electrode and the second electrode overlap each other in a plan view of the solid electrolyte, Sr/Sp is from 1×10to 6.9×10.

Solid electrolyte, electrochemical element, and limiting current type gas sensor

A solid electrolyte assembly has an anode, a cathode, and a solid electrolyte layer located therebetween. An intermediate layer is provided between the anode or the cathode and the solid electrolyte layer. The intermediate layer is made of a cerium oxide containing lanthanum and a rare-earth element excluding lanthanum and cerium. The solid electrolyte layer contains an oxide of lanthanum. Preferably, the solid electrolyte layer contains a composite oxide of lanthanum and silicon. Also, preferably, the intermediate layer is made of a cerium oxide containing lanthanum and any one of samarium, gadolinium, yttrium, erbium, ytterbium, and dysprosium.

Solid electrolyte assembly having intermediate layer

In a solid electrolyte integrated device including a substrate with electrically insulated surfaces, a first lower electrode layer and a second upper electrode layer are electrically connected to each other on a first main surface side, and a first upper electrode layer, the first lower electrode layer, the second upper electrode layer, and a second lower electrode layer transmit ions and/or have ion redox ability, contain a metal or a metal oxide or both of a metal and a metal oxide, and have a permeable portion.

Solid electrolyte integrated device, method of manufacturing solid electrolyte integrated device, and solid electrolyte element

An oriented apatite-type oxide ion conductor includes a composite oxide expressed as A[TM]O, where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, and M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and where x is from &#x2212;1.00 to 1.00, y is from 0.40 to less than 1.00, and z is from &#x2212;3.00 to 2.00.

Oriented apatite type oxide ion conductor and method for producing same

Provided is a substrate/oriented apatite-type composite oxide film complex which is suitable as a solid electrolyte for a battery, a sensor, a separation membrane, or the like, and can be produced inexpensively. Proposed is a substrate/oriented apatite-type composite oxide film complex provided with an oriented apatite-type composite oxide film on a substrate, wherein a film thickness of the oriented apatite-type composite oxide film is 10.0 &#x3bc;m or less, a degree of orientation (Lotgering method) thereof is 0.6 or more, and a material of the substrate at a side on which at least the oriented apatite-type composite oxide film is formed is a metal, an alloy, a ceramic, or a composite material thereof.

Substrate/oriented apatite-type composite oxide film complex and method for producing same

In order to provide a novel oriented apatite-type oxide ion conductor which can achieve an increase in area through suppression of crack generation and preferably can be manufactured more inexpensively by an uncomplicated process, an oriented apatite-type oxide ion conductor composed of a composite oxide represented by A[TM]OA in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba. T in the formula is an element including Si, Ge, or both of them. M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo.

Oriented apatite-type doped rare earth silicate and/or germanate ion conductor and method for manufacturing same

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Shingo Ide