Meidensha Corporation

National Institute of Advanced Industrial Science and Technology

Kabushiki Kaisha Meidensha

National Institute of Advanced Industrial Science

Shingo Ichimura

Tetsuya Nishiguchi

Hidehiko Nonaka

Mitsuru Kekura

Naoto Kameda

Yoshiki Morikawa

Takeshi Noyori

Shigeru Saitou

In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone gas is mixed with the starting gas at room temperature and a mixture quantity of the ozone gas with the starting gas is set to be equal to a chemical equivalent or more necessary for totally oxidizing the starting gas.

Method for oxide film formation and apparatus for the method

An oxide film forming equipment is provided with a reactorin which a heater unitholding a substrateis stored, a pipingprovided with a material gas introducing valve Vfor introducing a material gas containing organic silicon or organic metal into the reactor, a pipingprovided with an ozone containing gas introducing valve Vfor introducing an ozone containing gas into the reactor, and a pipingprovided with an exhaustion valvefor exhausting a gas in the reactor. When the material gas introducing valve V, the ozone containing gas introducing valve V, and the exhaustion valve Vperform open-and-closure operations to alternately supply the material gas and the ozone containing gas into the reactor, the ozone containing gas introducing valve Voperates to fall an ozone concentration of the ozone containing gas in a range from 0.1 vol % to 100 vol % and the heater unit adjusts a temperature of the substrate from a room temperature to 400&#xb0; C.

Method and equipment for forming oxide film

When exposing a sample to be oxidizedto ozone gas so as to form an oxide film on the surface of the sample, an area to be oxidized is heated locally. Local heating is carried out with a light sourcefor irradiating infrared light the area to be oxidized of the sample on the susceptor, and heating means for heating the susceptor. Moreover, when exposing the sample to be oxidized to ozone gas, ozone gas is supplied to the sample while heating the sample under a given pressure. Said pressure is adjusted at 100&#x2013;44,000 Pa, for example. The flow rate of ozone gas is adjusted, preferably, so that flow of ozone gas in a furnaceforms laminar flow. Moreover, it is desirable to provide a light source for emitting ultraviolet light. The light source for emitting ultraviolet light is arranged to irradiate the upstream side of the susceptor, for example.

Magenta toner and method for producing same

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Ibaraki, Japan

Shingo Ichimura