Panasonic Corporation

Shingo Hashizume

Manabu Yanagihara

Hiroto Yamagiwa

Ayanori Ikoshi

Yasuhiro Uemoto

Masahiro Hikita

A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switchconnected between an AC power supplyand a loadincludes: a bidirectional switch elementwhich flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supplyand the loadto form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifierperforming full-wave rectification on power supplied from the AC power supply; a power supply circuitsmoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuitand a second gate drive circuiteach outputting a control signal to the bidirectional switch element; and a control circuitcontrolling the first and second gate drive circuitsand

Two-wire AC switch

A semiconductor devicein a bi-directional switch includes: a first electrodeA, a second electrodeB, a first gate electrodeA, and a second gate electrodeB. In a transition period: when the potential of the first electrodeA is higher than the potential of the second electrodeB, a voltage lower than the first threshold voltage is applied to the first gate electrodeA and a voltage higher than the second threshold value voltage is applied to the second gate electrodeB; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.

Bi-directional switch, alternating-current two-wire switch, switching power source circuit, and method of driving bi-directional switch

A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.

Semiconductor device

A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.

Growing community of inventors

Kyoto, Japan

Shingo Hashizume