Nagoya University

Shingo Fuchi

Yoshikazu Takeda

Ayako Sakano

Ryota Mizutani

[PROBLEM] There is provided a broadband infrared light emitting device that radiates infrared light having a band broader than a conventional broadband infrared light emitting device. [MEANS FOR SOLVING] The broadband infrared light emitting device at least includes: a light sourcethat emits first excitation light &#x3bb;in a first wavelength range; a first glass phosphorthat has an excitation band in a first wavelength range, and when the first excitation light &#x3bb;is incident thereon, emits second excitation light &#x3bb;in a second wavelength range and first infrared light &#x3bb;in a third wavelength range; and a second glass phosphorthat has an excitation band in the second wavelength range and does not have an excitation band in the third wavelength range, and when the second excitation light &#x3bb;is incident thereon, allows the first infrared light &#x3bb;to pass therethrough and emits second infrared light &#x3bb;in a fourth wavelength range, and the broadband infrared light emitting device radiates broadband infrared light including at least a part of the third wavelength range and at least a part of the fourth wavelength range to an outside of the broadband infrared light.

Broadband infrared light emitting device

A semiconductor light-emitting device includes a semiconductor light-emitting element, and a sealing material sealing the semiconductor light-emitting element. The sealing material includes a phosphor which includes a matrix including a glass and a luminescence center included in the matrix. A refractive index of the matrix is more in a far side of the matrix than the refractive index of the matrix in a near side of the matrix, the far side being located farther from the semiconductor light-emitting element than the near side. The refractive index of the matrix is the same as a refractive index of the semiconductor light-emitting element.

Growing community of inventors

Nagoya, Japan

Shingo Fuchi