Canon Kabushiki Kaisha

The University of Tokyo

Shingo Eguchi

Hiroyuki Inoue

Yasushi Shimizu

Michio Endo

Atsunobu Masuno

Noriaki Oguri

A method for manufacturing glass, including the steps of heat-melting a raw material for producing glass by using a melting furnace having a plurality of gas flow paths while the raw material is levitated from the melting furnace by a gas ejected from the gas flow paths, and performing cooling so as to produce glass, wherein the melting furnace includes a recess portion, at least one first gas flow path configured to eject the gas in the vertical direction into the recess portion, a plurality of second gas flow paths configured to eject the gas in the direction toward the center axis of the melting furnace into the recess portion, the raw material is heat-melted while the raw material is levitated by the gas ejected from the first gas flow path and the gas ejected from the second gas flow paths, and the molten raw material is cooled.

Method for manufacturing glass, method for manufacturing lens, and melting apparatus

An optical glass including B, Laand Nbas cationic components constituting the glass, wherein the optical glass satisfies the following expressions represented in cation percentages:

Optical glass, optical element, and method for manufacturing optical glass

There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1&#xd7;10&#x3a9;/square and not more than 1&#xd7;10&#x3a9;/square.

Growing community of inventors

Utsunomiya, Japan

Shingo Eguchi