Taiwan Semiconductor Manufacturing Comp. Ltd.

Adata Technology Co., Ltd.

Shing Lee

Po-Chun Yen

Shih-Ming Yang

Shou-Wen Kuo

Yun Shen Chang

Kuo Hui Chang

Yi-Chieh Wang

Chung-Han Lin

Ching Lang Yen

Kuang-Jung Peng

Disclosed is a boot system and boot method for an intelligent robot. The boot system includes the intelligent robot and a mobile device. The intelligent robot includes an activating module, a wireless communication module and an image capturing device. The central processing unit is electrically connected to the activating module, the wireless communication module and the image capturing module. The mobile device includes an input interface, a first memory and a display. The input interface includes a username frame and a password frame. The username frame is configured to receive a username. The password frame is configured to receive a password. When the username and the password received by the input interface is compliant with the username and the password of the mobile device, the display indicates a verification code. The verification code includes a login username and a login password for establishing wireless network communication.

Boot system and boot method for intelligent robot

Disclosed is a boot system and boot method for an intelligent robot. The intelligent robot includes a central processing unit, an activating module, a memory and a wireless communication module. The central processing unit is electrically connected to the activating module, the memory and the wireless communication module. When the username and password stored in the memory is not compliant with the username and password of a wireless network, the intelligent robot enters a hotspot mode as a hotspot. A mobile device connects to the intelligent robot through the hotspot. The wireless communication module receives a login username and a login password from the mobile device. The intelligent robot connects to the wireless network for establishing the wireless network connection by the login username and the login password for entering a login mode.

An isolation feature with a nitrogen-doped fill dielectric and a method of forming the isolation feature are disclosed. In an exemplary embodiment, the method of forming the isolation feature comprises receiving a substrate having a top surface. A recess is etched in the substrate, the recess extending from the top surface into the substrate. A dielectric is deposited within the recess such that the depositing of the dielectric includes introducing nitrogen during a chemical vapor deposition process. Accordingly, the deposited dielectric includes a nitrogen-doped dielectric. The deposited dielectric may include a nitrogen-doped silicon oxide. In some embodiments, the depositing of the dielectric disposes the nitrogen-doped dielectric in contact with a surface of the recess. In further embodiments, a liner material is deposited within the recess prior to the depositing of the dielectric within the recess.

Method and structure for nitrogen-doped shallow-trench isolation dielectric

A method of improving the yield and performance of IC devices fabricated on a semiconductor wafer is disclosed. The method includes fabricating via plugs in via openings provided in an intermetal dielectric (IMD) layer on a wafer, subjecting the wafer to CMP to isolate the via plugs, immersing and soaking the wafer in deionized (DI) water, and drying the wafer using isopropyl alcohol, typically in a Marangoni-type dryer. The Marangoni IPA drying step prevents the formation of static electricity on the wafer, and thus, prevents the adherence of small charged particles to the wafer. As a result, the yield of IC devices fabricated on the wafer, as well as the performance of the devices, is enhanced.

Growing community of inventors

Hsinchu, Taiwan

Shing Lee