Au Optronics Corporation

Shine-Kai Tseng

Kuo-Lung Fang

Han-Tu Lin

Hao-Lin Chiu

Chun-Nan Lin

Shiun-Chang Jan

Po-Liang Yeh

Shu-Wei Tsao

Chin-Yueh Liao

Lih-Hsiung Chan

Hung-Wen Chou

Chi-Jui Lin

Chao-Yu Yang

Shih-Che Huang

Huang-Chun Wu

A touch panel including a substrate, a plurality of first and second sensing series, and a plurality of conductive repairing pattern layers is provided. The first sensing series are disposed on the substrate and extended along a first direction. Each of the first sensing series includes a plurality of first sensing pads and first bridge lines, and the first bridge lines serially connect two adjacent first sensing pads. The second sensing series are disposed on the substrate and extended along a second direction. Each of the second sensing series includes a plurality of second sensing pads and second bridge lines, and the second bridge lines serially connect two adjacent second sensing pads. Each conductive repairing pattern layer electrically floating locates around the crossover region of the first and second sensing series. Two adjacent sensing pads are connected by the conductive repairing pattern layer after a repair procedure is finished.

Touch panel and repairing method thereof

An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.

Active device

An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.

Active device, driving circuit structure, and display panel

A method of fabricating a TFT includes providing a substrate where a gate, an insulating layer, and a channel layer are formed. A conductive layer is formed on the substrate to cover the channel layer and the insulating layer. A photoresist layer is formed on the conductive layer. A photo mask is placed above the photoresist layer and has a data line pattern, a source pattern, and a drain pattern. A first width (W) between the source pattern and the drain pattern and a second width (W) of the data line pattern satisfy the following: if W&#x2212;1(um), then W+a(um), and 0.3&#x3c;a&#x3c;0.7. An exposing process is performed by using the photo mask, and a development process is performed to pattern the photoresist layer. The conductive layer is patterned by using the photoresist layer as an etching mask to form a source, a drain, and a data line.

Thin film transistor, method of fabricating thin film transistor and pixel structure

A method for fabricating a TFT array substrate includes following steps. A gate pattern and a first pad pattern are formed on a substrate. A gate insulation layer and a semiconductor layer covering the two patterns are sequentially formed. A patterned photoresist layer having different resist blocks is formed, and patterns and thicknesses of the resist blocks in different regions are adjusted. The semiconductor layer and the gate insulation layer above the first pad pattern are removed through performing an etching process and reducing a thickness of the patterned photoresist layer. After removing the patterned photoresist layer, a source pattern, a drain pattern, and a second pad pattern electrically connected to the first pad pattern are formed. A patterned passivation layer is formed on the gate insulation layer and has a second opening exposing the source pattern or the drain pattern and a third opening exposing the second pad pattern.

Method for fabricating thin film transistor array substrate

Growing community of inventors

Taoyuan County, Taiwan

Shine-Kai Tseng