Samsung Electronics Co., Ltd.

Shincheol Min

Jongwook Lee

Choongho Lee

Chang Woo Oh

Hyun-Min Choi

Jihoon Yoon

In a semiconductor device and a method of manufacturing the same a fuse structure may be formed during formation of first to third contact plugs connected to a transistor. The fuse structure may include first and second fuse contact plugs having the same height as the first and second contact plugs, and a connection pattern having the same height as the third contact plug. The connection pattern may be connected between the first and second fuse contact plugs.

Semiconductor device and method of manufacturing the same

Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Method of fabricating fin-field effect transistors (finFETs) having different fin widths

Method of fabricating fin-field effect transistors (finfets) having different fin widths

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Seoul, South Korea

Shincheol Min