Canon Kabushiki Kaisha

Shinan Wang

Kenji Tamamori

Yutaka Setomoto

Yasuyuki Tamura

Takashi Nakamura

Masahiko Okunuki

Haruhito Ono

Taiko Motoi

Toshiaki Aiba

Shinichiro Watanabe

Takayuki Teshima

Toru Nakakubo

Nobuki Yoshimatsu

Toshio Suzuki

Ryota Sekiguchi

Yasuto Kodera

Manabu Sueoka

Hideshi Kawasaki

Ryota Kashu

Tsunenori Soma

Hirotaka Sekiguchi

The present invention offers a device requiring a reduced number of manufacturing processes and providing high electrical reliability, and a method for manufacturing the device. The method for manufacturing the device forms through holes in a substrate, fills the through holes with a conductive material through electroplating from a first surface side of the substrate, polishes the conductive material to form through wirings, and forms an element portion on the first surface side. Then, the method processes the substrate so that the positions of the end faces of the through wirings measured from the substrate surface on the first surface side are made smaller in depth than the positions of the end faces of the through wirings measured from the substrate surface on the second surface side.

Method for manufacturing through wiring substrate and method for manufacturing device

A method for creating an electronic device including a semiconductor substrate, an element unit, a through wiring line, and a wiring portion includes forming interstitial via holes in a first surface of the substrate, forming a first insulating film on the inner walls of the via holes, forming openings that reach the first insulating film on the bottoms of the via holes from a second surface of the substrate, forming a second insulating film on the bottoms of the openings, forming a through wiring line in the via holes, forming an element unit that electrically connects the through wiring line, reducing the thickness of the substrate from the second surface so that the second surface becomes flush with the second insulating film on the bottoms of the openings, and forming a wiring portion, on the second insulating film, that electrically connects to the through wiring line.

Transducer device comprising an insulating film between a through wiring line and a semiconductor substrate

A capacitive transducer includes a substrate having a first surface and a second surface opposite the first surface, the substrate including a through wire extending therethrough between the first surface and the second surface, and a cell on the first surface, the cell including a first electrode and a second electrode spaced apart from the first electrode with a gap between the first electrode and the second electrode. Conductive protective films are disposed over surfaces of the through wire on the first surface side and the second surface side of the substrate.

Device with electrode connected to through wire, and method for manufacturing the same

According to a method for manufacturing a device in which an electrode of an element is electrically connected to a penetrating wire in a substrate, a structure is prepared in which the element is arranged on the first substrate having a through hole formed therein: and a second substrate is prepared which has an electroconductive seed layer formed thereon. Then, a wall part is formed on the first substrate; a seed layer is joined to a face on an element side of the structure through a bonding layer; the bonding layer is removed; and the seed layer is exposed in the inside of the opening. The inside of the wall part and the through hole is filled with a conductor, with the use of the seed layer through electrolytic plating.

Device having element electrode connected to penetrating wire, and method for manufacturing the same

The present inventions provide a capacitive transducer that can reduce film damage on a substrate surface on a vibration film side due to a difference in thermal expansion coefficient between a through wiring and a substrate and a method of manufacturing the same. The capacitive transducer consists of a plurality of cells with each cell comprising a first electrode and a vibration film on a first surface side of a substrate having a through wiring that penetrates the substrate from a first surface to a second surface of the substrate, the vibration film including a second electrode that is formed with a gap from the first electrode. A holding member that holds a leading end of the through wiring is provided on the first surface side of the substrate.

Capacitive transducer and method of manufacturing the same

A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.

Microstructure manufacturing method

In a method of producing a device in which an element structure is provided on a substrate including a through wiring, a through hole is formed so as to extend from a first surface of the substrate to a second surface of the substrate disposed on an opposite side of the substrate to the first surface, the through wiring is formed by filling the through hole with an electrically conductive material, and the element structure is formed on a first surface side. In the step of forming the through hole, a degree of surface irregularities of an inner wall of the through hole is larger on the first surface side than on a second surface side.

Method of producing through wiring substrate and method of producing device

Provided is a method of forming a through wiring, including forming a first insulating film on a first surface and a second surface of a substrate; forming a through hole to pass through the first insulating film formed on the first surface side and the substrate; forming a second insulating film formed from a material different from that of the first insulating film on an inner wall of the through hole; forming a conductive film on the first insulating film formed on the second surface; forming an opening in the first insulating film by processing the first insulating film formed on the second surface; and filling an inner portion of the through hole with a conductive material by electrolytic plating using the conductive film exposed at the bottom portion of the through hole as a seed layer.

Method of forming through wiring

A method of manufacturing an ejection orifice member includes: preparing a substrate including a first layer, a second layer, and a third layer, the first layer protruding in a first direction crossing a principal surface of the substrate, the second and third layers being formed on the first direction side of the first layer, the preparing a substrate including forming the second layer to follow a contour of a first direction side surface of the first layer, and then forming the third layer on a surface of the second layer which protrudes on the first direction side; performing plating using the second layer as a seed to form a fourth layer on the first direction side of the second layer; removing the third layer from the fourth layer to form a hole as the ejection orifice in the fourth layer; and thinning the fourth layer at least around the hole.

Method of manufacturing an ejection orifice member

A process for producing a liquid ejection head having a piezoelectric body provided with an ejection orifice for ejecting liquid and a pressure chamber communicating therewith for retaining the liquid, wherein an electrode is formed on an inner wall surface of the pressure chamber to deform the pressure chamber by piezoelectric action caused by applying voltage to the electrode to eject the liquid, comprising providing the piezoelectric body in which a surface thereof having the ejection orifice has an arithmetic mean roughness of 0.1-1 &#x3bc;m, forming a dry film resist pattern on the surface of the piezoelectric body so as to expose the ejection orifice and a linear region connected thereto, and forming a metal thin film pattern being connected to the electrode on the inner wall surface and continuously extending from the inner wall surface to the linear region by using the dry film resist pattern as a mask.

Process for producing liquid ejection head

A liquid ejection head has a plurality of pressure chambers each communicating with an ejection port at one end and with an ink supply port at the other end. Each of the pressure chambers has lateral walls formed by piezoelectric elements and configured so as to eject ink from the corresponding ejection port as a result of a capacity change of the pressure chamber due to an expansion or contraction of the piezoelectric elements. The liquid ejection head is constituted by a plate-shaped piezoelectric portion and a plurality of column-shaped piezoelectric portions arranged thereon. The plate-shaped piezoelectric portion has a plurality of holes and a plurality of through holes located around the holes. Each of the column-shaped piezoelectric portions has a hollow section. Each hole of the plate-shaped piezoelectric portion and the hollow section of the corresponding column-shaped piezoelectric portion form a pressure chamber.

Liquid ejection head and method of manufacturing the same

A microstructure manufacturing method includes: preparing a mold having on a front side thereof a plurality of fine structures, with conductivity being imparted to a bottom portion between the plurality of fine structures; forming a first plating layer between the plurality of fine structures by plating the bottom portion; and forming a second plating layer of larger stress than the first plating layer on the first plating layer between the plurality of fine structures, wherein the stress of the second plating layer is used to curve a back side surface of the mold.

Microstructure manufacturing method and microstructure

A liquid ejection head includes a piezoelectric block body having a plurality of pressure chambers arranged two-dimensionally to face respective ejection ports, a plurality of air chambers arranged adjacently relative to the plurality of pressure chambers, and a plurality of flow channels arranged along the pressure chambers. The pressure chambers are deformed by expansion and contraction of piezoelectric members disposed between the pressure chambers and the air chambers so as to drive the liquid stored therein to flow toward the ejection ports. A connection flow channel is provided at the ejection port side of the piezoelectric block body so as to make each of the pressure chambers communicate with at least one of the flow channels for partial recirculation of the ink.

Liquid ejection head formed of piezoelectric plates

A process for producing a liquid ejection head includes a provision step of providing a piezoelectric substrate, and a first and a second support substrate for supporting the piezoelectric substrate; a bonding step of bonding one surface of the first support substrate to one principal surface of two principal surfaces of the piezoelectric substrate; a groove forming step of forming a groove in the other principal surface of the two principal surfaces of the piezoelectric substrate; an electrode forming step of forming a first electrode on at least one surface of a lateral surface of the groove, a bottom surface of the groove and the other principal surface remaining after the groove is formed; a joining step of joining one surface of the second support substrate to the other principal surface of the piezoelectric substrate; and a separation step of separating the first support substrate from the piezoelectric substrate.

Growing community of inventors

Kashiwa, Japan

Shinan Wang