Sony Corporation

Joled Inc.

Shina Kirita

Toshitaka Kawashima

Masayasu Kakinuma

Shuichi Haga

Junichi Ohsako

Hiroshi Hayashi

Kazuhito Shimoda

Yoshihiro Oshima

Takayuki Shimamura

Hideya Chubachi

Yuichi Kamori

Takahiro Nagata

A light-emitting element includes: a light-reflective first electrode; a light-emitting layer above the first electrode; a light-transmissive second electrode above the light-emitting layer; a first light-transmissive layer on the second electrode; and a second light-transmissive layer on the first layer. First optical cavity structure is formed between surface of the first electrode facing the light-emitting layer and surface of the second electrode facing the light-emitting layer. The first optical cavity structure corresponds to, as peak wavelength, first wavelength longer than peak wavelength of light emitted from the light-emitting layer. Second optical cavity structure is formed between the surface of the first electrode facing the light-emitting layer and an interface between the first layer and the second layer. The second optical cavity structure corresponds to, as peak wavelength, second wavelength shorter than the first wavelength. The first and second layers differ in refractive index from each other by 0.3 or greater.

Self-luminous element, self-luminous panel, and self-luminous panel manufacturing method

An organic electroluminescent element includes, in order, a first electrode, an organic layer that includes an organic electroluminescent layer, an interface adjustment layer, a resistive layer, and a second electrode. The resistive layer has a specific resistance higher than a specific resistance of the second electrode. The interface adjustment layer has a specific resistance higher than the specific resistance of the second electrode and lower than the specific resistance of the resistive layer.

Organic electroluminescent element

A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode.

Method of manufacturing thin film transistor, thin film transistor, and display unit

A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using &#x3b3;-AlOas a dopant material.

Methods for manufacturing zinc oxide base sputtering target and transparent electrically conductive film

A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel.

Liquid crystal display with a light selective reflection filter

A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.

An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible. As a result, it is possible to obtain the highly reliable insulating layer which is excellent in the withstand voltage strength.

Electro-wetting device and a method of manufacturing the same

LCD with selective transmission filter having light transmittance of 80% or more at wavelength regions of 440+/&#x2212;20nm; 525+/&#x2212;25nm and 565+/&#x2212;45nm, and 10% or less at 470 to 485nm and 575 to 595nm

A reflective screen is provided. A reflective screen that displays an image by reflecting light from a light source includes a reflective sheet, a light-scattering sheet, and an adhesive layer bonding the reflective sheet to the light-scattering sheet. The adhesive layer contains a coloring material that absorbs light in a particular wavelength region.

Growing community of inventors

Tokyo, Japan

Shina Kirita