Macronix International Co., Ltd.

Shin-Yi Chou

Hung-Yu Chiu

U-Way Tseng

Shih-Liang Chou

Fu-Hsiang Hsu

A method of forming an intermetal dielectric (IMD) layer. At least one metal wire is formed on a substrate. A filling oxide layer is formed on the substrate and the metal wire. The surface of the filling oxide layer is smoothed. A first silicon-rich oxide layer is formed on the filling oxide layer, where the refractive index (RI) of the first silicon-rich oxide layer is 1.6&#x2dc;1.64. A second silicon-rich oxide layer is formed on the first silicon-rich oxide layer, where the refractive index of the second silicon-rich oxide layer is 1.49&#x2dc;1.55. According to the present method, the diffusion of mobile hydrogen ions is blocked by manufacture with dual silicon-rich oxide layers.

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Hsinchu, Taiwan

Shin-Yi Chou