Nippon Gakki Seizo Kabushiki Kaisha

Shin Yamashita

Terumoto Nonaka

Tadahiko Hotta

Jun-ichi Nishizawa

Yasunori Mochida

In a semiconductor device of the type arranged so that the minority carriers are injected into a lightly-doped n type semiconductor layer from a heavily-doped p type semiconductor layer provided in the n type layer, that portion of the p type layer excluding a certain portion is separated from the n type layer by a separator layer to cause the p type layer to contact the n type layer only at the certain portion, whereby the carrier injection is restricted to occur within a limited region of the n type layer contacting the certain portion of the p type layer. The separator and the p type layer are formed, by relying on a self-alignment technique using a double-mask layer, as diffused regions partially overlapping each other with a good relative alignment in the n type layer.

Semiconductor device and manufacturing process thereof

An integrated semiconductor device including at least one first vertical-type junction field effect transistor (vertical JFET) having a triode-like unsaturated voltage-current characteristic and at least one second vertical JFET having a bipolar-transistor-like saturated voltage-current characteristic, both being integrally formed in a semiconductor body. Both the first and second vertical JFET are much similar in general arrangement to each other, thus allowing simultaneous forming thereof by the same manufacturing process, without sacrificing the good characteristics of these two types of transistors.

Integrated semiconductor device

In an integrated semiconductor device of the IIL type which includes a switching transistor and an injector transistor for supplying carriers to drive the switching transistor, the switching transistor is a static induction transistor which comprises: cylindrical current channels for providing current paths between a source and drains; a control gate surrounding the outer boundaries of the channels to form pn junctions therebetween and being injected with carriers from the injector transistor to control the current flow in the channels; and floating gates disposed inside the respective channels to form pn junctions therebetween. The floating gates are electrically floating and have a potential affected by the potential of the control gate to contribute to the channel conduction controlling action together with the control gate.

Growing community of inventors

Hamamatsu, Japan

Shin Yamashita