Jsr Corporation

Shin-ya Nakafuji

Shin-ya Minegishi

Goji Wakamatsu

Satoru Murakami

Takanori Nakano

Fumihiro Toyokawa

Gouji Wakamatsu

Yoshio Takimoto

Tsubasa Abe

Kazunori Sakai

Toru Kimura

Tomoaki Taniguchi

Yuushi Matsumura

Kazuhiko Komura

Katsuhisa Mizoguchi

Takashi Okada

Takeshi Endo

Masayuki Motonari

Kazunori Takanashi

Naoya Nosaka

Tooru Kimura

Kyoyu Yasuda

Tomohiro Oda

Yushi Matsumura

Hiroki Nakatsu

Takaaki Uno

Kazuhiko Koumura

Masaki Moritsugu

Shingo Takasugi

The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), Rand Reach independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; Rrepresents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.

Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound

A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Arrepresents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Arrepresents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and Rrepresents an ethynediyl group or a substituted or unsubstituted ethenediyl group.

Composition, pattern-forming method, and compound-producing method

A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. Rrepresents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; Lrepresents an ethynediyl group or a substituted or unsubstituted ethenediyl group; Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3. 

Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound

A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), Xand Xeach independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to Xor X; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3. 

Composition, method for producing patterned substrate, film and forming method thereof, and compound

A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. Xand Xeach independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. Rand Reach independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8. 

Composition for film formation, film, production method of patterned substrate, and compound

A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.

Composition for forming a resist underlayer film, and pattern-forming method

A composition comprises: a compound having one partial structure represented by formula (1), and a solvent. n1 and n2 are each independently an integer of 0 to 2; and k1 and k2 are each independently an integer of 0 to 9. The compound preferably has an intermolecular bond-forming group. The compound is preferably represented by formula (2). Z represents the partial structure represented by the formula (1); Arand Arrepresent a substituted or unsubstituted arenediyl group having 6 to 20 carbon atoms; Arand Arrepresent a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and p1 and p2 are each independently an integer of 0 to 3.  

A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R, Rand Reach independently represent a group represented by the formula (a). In the formula (a), Rrepresents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. Rrepresents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring. 

Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring. 

Composition for forming resist underlayer film

A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180&#xb0; C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.

Resist underlayer film-forming composition, pattern-forming method and resist underlayer film

A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. Rrepresents a hydroxy group, or the like. n is an integer of 0 to 5. X represents a divalent hydrocarbon group having 1 to 20 carbon atoms or an alkanediyloxy group having 1 to 20 carbon atoms. m is an integer of 1 to 7. A sum of m and n is no greater than 7. Rrepresents a single bond or an alkanediyl group having 1 to 4 carbon atoms. Rrepresents an alicyclic group having 4 to 20 carbon atoms or an aryl group having 6 to 30 carbon atoms. A part or all of hydrogen atoms included in the alicyclic group or the aryl group represented by Rare unsubstituted or substituted. 

Composition for forming resist underlayer film and pattern-forming method

A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. A content of hydrogen atom in the resist underlayer film is from 0 to 50 atom %. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or &#x2014;NR&#x2014;. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. nis an integer from 1 to 6. Rrepresents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. 

Pattern forming method

A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *&#x2014;COO&#x2014; or &#x2014;NR&#x2014;. Rrepresents a hydrogen atom or a Cmonovalent hydrocarbon group. Rrepresents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a Cmonovalent hydrocarbon group, a Cmonovalent oxyhydrocarbon group or a Cmonovalent sulfanilhydrocarbon group. p is an integer of 1 to 3. 

Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method

Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask. 

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Tokyo, Japan

Shin-ya Nakafuji