Stmicroelectronics Gmbh

Stmicroelectronics(tours) Sas

Shin Phay Lee

Voon Cheng Ngwan

Ditto Adnan

Maurizio Gabriele Castorina

Fadhillawati Tahir

A trench in a semiconductor substrate is lined with a first insulation layer. A hard mask layer deposited on the first insulation layer is used to control performance of an etch that selectively removes a first portion of the first insulating layer from an upper trench portion while leaving a second portion of first insulating layer in a lower trench portion. After removing the hard mask layer, an upper portion of the trench is lined with a second insulation layer. An opening in the trench that includes a lower open portion delimited by the second portion of first insulating layer in the lower trench portion and an upper open portion delimited by the second insulation layer at the upper trench portion, is then filled by a single deposition of polysilicon material forming a unitary gate/field plate conductor of a field effect rectifier diode.

Method of making a charge coupled field effect rectifier diode

An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop Vfof the monolithic diode device is less than a forward voltage drop Vfof the body diode of the MOSFET device. The forward voltage drop Vfis process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop Vfadvantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.

Growing community of inventors

Singapore, Singapore

Shin Phay Lee