Sharp Kabushiki Kaisha Corporation

Shin Matsumoto

Yutaka Takafuji

Yasumori Fukushima

Michiko Takei

Kazuhide Tomiyasu

Kazuo Nakagawa

The present invention is intended to provide a glass substrate (), made of an insulating material, which can constitute a semiconductor apparatus () by transferring a single crystal silicon film () or a substrate including a semiconductor device onto a surface () of the insulating substrate, a transferred surface () being part of the surface (), the single crystal silicon film () capable of being provided on the transferred surface (), and the transferred surface () having an arithmetic mean roughness of not more than 0.4 nm.

Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus

Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

Semiconductor device and method for manufacturing same

To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layerin a transferred memberby implanting a peeled-layer forming substance into the transferred member; forming a planar surface in the transferred memberby planarizing a surface of the transferred member; forming a composite including the transferred memberand a glass substrateby directly combining the transferred membervia the planar surface with a surface of the glass substrate; and peeling a part of the transferred memberfrom the composite along the peeled layerserving as an interface by heat-treating the composite.

Growing community of inventors

Osaka, Japan

Shin Matsumoto