Sandisk Technologies Inc.

Shin Koyama

Eisuke Takii

Hiraku Hashimoto

A semiconductor structure includes semiconductor devices located on a top surface of a substrate semiconductor layer, lower-level metal interconnect structures, source-level material layers, and a three-dimensional memory array including an alternating stack of insulating layers and electrically conductive layers and memory stack structures vertically extending through the alternating stack and comprising a respective vertical semiconductor channel and a respective memory film. A vertically alternating sequence of insulating plates and dielectric material plates is laterally surrounded by the alternating stack. A through-memory-level interconnection via structure vertically extends through each plate within the vertically alternating sequence and contacts a center portion of a top surface of one of the lower-level metal interconnect structures. At least one silicon nitride liner prevents or reduces oxidation of the lower-level metal interconnect structures underneath the through-memory-level interconnection via structure.

Growing community of inventors

Yokkaichi, Japan

Shin Koyama