Nec Corporation

Shin Koide

Susumu Ohi

Kesao Noguchi

Tooru Ukita

Shuuki Yamamori

Takuya Katou

Shigeru Kimura

Hirofumi Ihara

Kohji Nakashima

In a reflective liquid crystal display, source/drain electrodes are formed on an insulation substrate and separated from each other. A pixel electrode is provided which has an end portion unitary formed with the source electrode and the pixel electrode extending over the insulation substrate. A semiconductor layer extends over the insulation substrate in contact directly with a gap between the source/drain electrodes and also extends on at least respective parts of the source/drain electrodes for connecting the source/drain electrodes. A gate insulation film extends over entire parts of the semiconductor layer. A gate electrode extends on at least a part of the gate insulation film so that the gate electrode is positioned to cover the semiconductor layer and to be separated by the gate insulation film from the semiconductor layer for shielding the semiconductor layer from incident light. A reflective plate is formed over the pixel electrode so as to be separated from the gate electrode and from the semiconductor layer. An opposite electrode is supported on a surface of an opposite substrate so that the opposite electrode is separated by a space filled with a liquid crystal from the gate electrode and from the reflective plate and also that the opposite electrode faces to the gate electrode and the reflective plate.

Reflective plate structure provided in a reflective liquid crystal display having a thin film transistor

Reflective liquid crystal display with gate covering semiconductor and

There is provided a reflection type liquid crystal display including (a) a first substrate having a roughened surface, (b) a second substrate spaced away from the first substrate in opposing relation to the roughened surface of the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a metal film formed on the roughened surface of the first substrate for reflecting lights therefrom, (e) a transparent dielectric film formed on the metal film, the transparent dielectric film having a planarized upper surface, (f) a plurality of transparent pixel electrodes formed on the transparent dielectric film, and (g) a plurality of switching devices formed on the transparent dielectric film, each of the switching devices being electrically connected with each of the transparent pixel electrodes, the transparent pixel electrodes and the switching devices being arranged in a matrix. The above-mentioned reflection type liquid crystal display makes it possible to provide an excellent light diffusion and reflection function without special technique. In particular, it is possible to reduce the number of photolithography steps for fabricating an active matrix type substrate, ensuring lower fabrication costs and a higher fabrication yield.

Method of fabricating a reflection type liquid crystal display in which

Reflection type liquid crystal display and method of fabricating the same

A thin film transistor of an active matrix liquid crystal display unit has a gate electrode continued to a gate terminal supplied with a gate control signal, a gate insulating layer formed beneath the gate electrode and the gate terminal, source and drain electrodes formed between the gate insulating layer and an insulating layer and an amorphous silicon layer extending on the insulating layer between the source and drain electrodes, and a silicide layer is inserted between the insulating layer and the gate insulating layer so as to enhance the adhesion therebetween.

Structure of thin film transistor and gate terminal having a capacitive

A thin-film transistor (TFT) array for preventing the light reflected inside a liquid crystal panel from entering a channel layer, while suppressing an increase of stray capacitance. A light shading film and an antireflection film atop source and drain electrodes are made of semiconductor layers and are spaced from each other on a TFT. The reduction in reflected light prevents an increase in an off current and therefore improves the quality of a liquid crystal display.

Thin-film transistor array having light shading film and antireflection

A method for a thin-film transistor employed as a liquid crystal display includes the steps of selectively forming a gate electrode on a substrate, covering the gate electrode and the substrate with a gate insulating film, forming a semiconductor channel layer on the gate insulating film, forming on the channel layer a semiconductor contact layer of a first conductivity type having first, second and third portions, forming source and drain electrodes respectively on the first and second portions of the contact layer, removing the third portion of the contact layer to expose a part of the channel layer, and forming a semiconductor region of a second conductivity type at the part of the channel layer.

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Tokyo, Japan

Shin Koide