Cypress Semiconductor Corporation

Spansion Llc.

Shin Iwase

Fumiaki Toyama

Yoshihiro Mikasa

Takaya Tabuchi

Devices and methods for forming charge storage regions are disclosed. In one embodiment, a semiconductor device comprises a semiconductor layer having a trench, charge storage layers formed at both side surfaces of the trench, a wordline buried in the trench in contact with the charge storage layers, and source-drain regions formed in the semiconductor layer at both sides of the trench.

Lateral charge storage region formation for semiconductor wordline

A semiconductor device and a method for manufacturing the semiconductor device is disclosed. The semiconductor device includes a bit line formed to extend into a semiconductor substrate, a charge storage layer formed on the semiconductor substrate, a word line formed above the charge storage layer to extend across the bit line, a gate electrode formed on the charge storage layer under the word line and between bit lines, a first insulating film formed over the bit line and to extend in the direction of the bit line and a second insulating film that includes a different material than that of the first insulating film and formed to adjoin a side surface of the first insulating film. In addition, the semiconductor device includes an interlayer insulating film that includes a different material from that of the second insulating film that is formed on the first insulating film and the second insulating film and a contact plug coupled to the bit line and formed to penetrate through the first insulating film and the interlayer insulating film and to be sandwiched by the second insulating film.

Growing community of inventors

Fukushima-ken, Japan

Shin Iwase