Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Tamura Electric Works, Ltd.

Shin Iwabuchi

Takeshi Yanagita

Yasushi Maruyama

Makoto Motoyoshi

Kazuhide Yokota

Masashi Ohura

Ryoji Suzuki

Hiroyuki Mori

Tomoyuki Hirano

Yoshiharu Kudoh

Yoichi Ueda

Nobuhiro Karasawa

Hirotoshi Nomura

Shinichi Yoshida

Tetsuya Uchida

Yukari Takeya

Hisahiro Ansai

Mamoru Suzuki

Hiroshi Ozaki

Shunsuke Maruyama

Tomoharu Ogita

Takashi Oyamada

Atsushi Okuyama

Shoji Kobayashi

Osamu Kai

Toshikazu Shibayama

Kazuhiro Satou

Kensuke Motozono

Masatoshi Iwamoto

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Solid-state imaging apparatus and electronic apparatus

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Semiconductor image sensor module and method of manufacturing the same

The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Solid-state imaging device and electronic apparatus

The present technology relates to a solid-state image pickup device that suppresses dark current while increasing the saturated charge amount, a manufacturing method therefor, and an electronic apparatus. The device includes a first photoelectric converter on a front surface side opposite to a light incident surface side of a substrate; a second photoelectric converter stacked on the first photoelectric converter; and a pixel isolation section, the pixel isolation section passing through the substrate. The first photoelectric converter includes a first plane-direction PN junction region joined in a plane direction parallel to a light incident surface of the substrate and a first perpendicular-direction PN junction region along a side wall of the pixel isolation section. The second photoelectric converter includes a second plane-direction PN junction region and a second perpendicular-direction PN junction region. The present technology can also be applied to a solid-state image pickup device or the like, for example.

Solid-state image pickup device, manufacturing method therefor, and electronic apparatus

The present disclosure relates to a semiconductor device, a solid state imaging element, and an electronic apparatus in which the adverse effect due to hot carrier luminescence can be suppressed. In them, an element formation unit in which a plurality of elements are formed and an interconnection unit in which interconnections connecting elements are formed are stacked. A structure object formed between a light receiving element that receives light and performs photoelectric conversion and an active element that forms a peripheral circuit placed around the light receiving element in such a manner that the gap in the thickness direction of the element formation unit is not more than a prescribed spacing and formed of a material that inhibits the propagation of light is placed in the element formation unit. The present technology can be applied to a back-side illumination solid state imaging element, for example.

Semiconductor device, solid state imaging element, and electronic apparatus

The present disclosure relates to a solid-state imaging apparatus and an electronic device capable of reducing a product yield and reliability risk. By forming a contact by forming an opening in an insulating film on a back surface of a peripheral circuit region without connecting a light-shielding metal on the peripheral circuit region to the ground (GND), the light-shielding metal is connected to a Si substrate. Furthermore, a light-shielding metal on a pixel region is connected to the ground (GND). Therefore, by disposing an isolated region (insulating region) where no metal is formed between the light-shielding metal on the pixel region and the light-shielding metal on the peripheral circuit region, the light-shielding metal on the pixel region does not cause a short circuit with the light-shielding metal on the peripheral circuit region. The present disclosure can be applied to, for example, a CMOS solid-state imaging apparatus used for an imaging apparatus such as a camera.

Solid-state imaging apparatus and electronic device

A back-illuminated type solid-state image pickup device () includes read circuits (Tr, Tr) formed on one surface of a semiconductor substrate () to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (), in which electric charges (e) generated in a photo-electric conversion region () formed under at least one portion of the read circuits (Tr, Tr) are collected to an electric charge accumulation region () formed on one surface side of the semiconductor substrate () of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device

A solid-state imaging device includes a substrate in which a plurality of pixels including photoelectric converters are formed, a wiring layer that includes wirings in a plurality of layers formed via an interlayer insulating film in a front surface side of the substrate, a base electrode pad portion that includes a portion of the wirings formed in the wiring layer, an opening that penetrates the substrate from a rear surface side of the substrate and reaches the base electrode pad portion, and an embedded electrode pad layer that is formed so as to be embedded in the opening by electroless plating.

Methods of forming integrated circuits

Growing community of inventors

Kanagawa, Japan

Shin Iwabuchi