Samsung Display Co., Ltd.

Shin Il Choi

Sang Gab Kim

Su Bin Bae

Yu-Gwang Jeong

Hyun Min Cho

Joon Geol Lee

Tae Wook Kang

Hong Sick Park

Kyeong Su Ko

Hyuneok Shin

Bong-Kyun Kim

Hyun Eok Shin

Dongmin Lee

Yunjong Yeo

Sung Hoon Yang

Yong-Hwan Ryu

Sukyoung Yang

Hyunah Sung

Yu Gwang Jeong

Hyang-Shik Kong

Sanggab Kim

Myoung Geun Cha

Sangwon Shin

Sang Gun Choi

Gyung Min Baek

Sang Won Shin

Gyungmin Baek

Se Hwan Yu

Dong Min Lee

Dokeun Song

Yong Hwan Shin

Ji Hye Han

Dae Ho Kim

Su Mi Lee

Chang Ok Kim

Yun Jung Oh

Donghyeok Lee

Hyunwoo Kang

Jin Hwan Choi

Hyun Sook Kim

Yong Kim

Joonyong Park

Tae Sung Kim

Jong Chan Lee

Ji Hun Kim

Taewook Kang

Tae An Seo

Seung-Ha Choi

Joo Hyung Lee

Byeong-Beom Kim

Wang Woo Lee

Jiseon Lee

Jungkyu Lee

Kyungseop Kim

Duk-Sung Kim

Juhyun Lee

Jungha Son

Joon Yong Park

Ju Hyun Lee

Sangwoo Sohn

Jae Neung Kim

Sang Woo Sohn

Hongsick Park

Jung Ha Son

Gugrae Jo

Yoonho Khang

Changoh Jeong

Jong Hyun Choung

Chul Min Bae

Junghwan Yi

Sho Yeon Kim

Dong Il Kim

Do Keun Song

Honglong Ning

Dongjo Kim

Gwan Ha Kim

Hyunju Kang

Young Rok Kim

Sehwan Yu

Chui Min Bae

Jinho Hwang

Jong Mo Yeo

Taeho Kang

A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

Display device and method of manufacturing the same

A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Light emitting diode device and method of manufacturing the same

A display device includes conductive layers including wires and conductive patterns in a display area and a pad area, a via layer on the conductive layers, a first electrode and a second electrode on the via layer in the display area and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first electrode and the second electrode spaced apart from each other on the first insulating layer, and a first connection electrode on the first electrode and electrically contacting the light emitting elements, and a second connection electrode on the second electrode and electrically contacting the light emitting elements, each of the conductive layers includes a first metal layer and a second metal layer on the first metal layer, and the second metal layer contains copper and has a grain size of about 155 nm or less.

Wiring substrate and display device including the same

A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate insulation layer in the display area, a first signal line in the same layer as the first gate line in a non-display area and including the same material as that of the first gate line including molybdenum, a second gate insulation layer on the first gate line and the first signal line, a second gate line on the second gate insulation layer in the display area, and a second signal line in the same layer as the second gate line in the non-display area and including the same material as that of the second gate line including aluminum or an aluminum alloy. A width of the first signal line is greater than a width of the second signal line.

Display device and method of manufacturing display device

A display device includes a substrate including a display area and a pad area, a transistor including an active layer disposed in the display area, a gate electrode disposed on the active layer, and a source electrode and a drain electrode disposed on the gate electrode, a fan-out line disposed in the pad area, an auxiliary line disposed on the fan-out line, a first interlayer insulating layer disposed between the gate electrode and the source electrode and between the fan-out line and the auxiliary line, and a first organic layer disposed between the first interlayer insulating layer and the auxiliary line, wherein the first organic layer does not overlap the display area.

Display device

A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Method of manufacturing display apparatus having second electrode that contacts second conductive layer

A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.

Method of manufacturing organic light-emitting display device

Display apparatus including power supply wire that contacts second electrode and method of manufacturing the same

A display panel includes a base substrate, a pixel including a thin film transistor and a display element, a first signal line connected to the pixel, and a second signal line disposed on a layer different from the first signal line. At least one of the first signal line and the second signal line includes a lower layer including a conductive material and an upper layer disposed on the lower layer and including a conductive material. The upper layer has an etch selectivity in a range equal to or greater than about 0.5 and equal to or smaller than about 3 with respect to the lower layer.

Display panel

A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.

Light unit, manufacturing method thereof and display device comprising the same

A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 &#x3bc;m, and each of the thicknesses of the first and second insulating layers is less than 1 &#x3bc;m.

Connecting structure of a conductive layer

An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65&#xb0;.

Organic light emitting diode display and manufacturing method thereof

A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

Transistor array panel and manufacturing method thereof

Growing community of inventors

Hwaseong-si, South Korea

Shin Il Choi