Hamamatsu-Photonics K.k.

Shin-ichiro Takagi

Masaharu Muramatsu

Yasuhito Yoneta

Hisanori Suzuki

Kentaro Maeta

Kazuhisa Miyaguchi

Mitsuhito Mase

Jun Hiramitsu

Nao Inoue

Kenichi Sugimoto

Hirokazu Yamamoto

Takuo Koyama

Shingo Ishihara

Hiroshi Tsunemi

Takeshi Tsuru

Tadayasu Dotani

Takayoshi Kohmura

Shinichi Nakata

Atsunori Yamada

The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

Solid state imaging device

A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.

A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal.

Backside incident-type imaging element

A semiconductor device includes a support body including a mount region, a semiconductor chip disposed on the mount region with a predetermined distance therebetween, a bump disposed between the support body and the semiconductor chip, a wall portion disposed between the support body and the semiconductor chip along a part of an outer edge of the semiconductor chip, and an underfill resin layer disposed between the support body and the semiconductor chip. The underfill resin layer covers an outer side surface of the wall portion.

Semiconductor device and method for manufacturing semiconductor device

A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.

Backside incidence type solid-state image pickup device

A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

Solid-state imaging device

An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S. A drain region ARD is adjacent to the charge accumulation region Sthrough a channel region.

Linear image sensor

Each pixel region PX includes a photoelectric conversion region S, a resistive gate electrode R, a first transfer electrode T, a second transfer electrode T, a barrier region B positioned directly beneath the first transfer electrode Tin a semiconductor substrate, and a charge accumulation region Spositioned directly beneath the second transfer electrode Tin the semiconductor substrate. An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S, and the first transfer electrode Tand the second transfer electrode Tare electrically connected to each other.

Charge-coupled device, manufacturing method thereof, and solid-state imaging element

A solid-state imaging deviceaccording to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging areathat generates a charge according to the amount of incident light, an output register unitthat receives the charge from the imaging area, and a multiplication register unitthat multiplies the charge from the output register, and performs feed-forward control of the multiplication factor of the multiplication register unitaccording to the charge amount from the imaging area

Solid-state imaging device performing feed-forward control of multiplication factor of multiplication register to match dynamic range of the device with the intensity distribution of incident light

A semiconductor substrate is provided with a plurality of photosensitive regions on a first principal surface side. An insulating film has a third principal surface and a fourth principal surface opposed to each other, and is arranged on the semiconductor substrate so that the third principal surface is opposed to the first principal surface. A cross section parallel to a thickness direction of the semiconductor substrate, of a region corresponding to each photosensitive region in the first principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film, of a region corresponding to each photosensitive region in the third principal surface is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the first principal surface. The fourth principal surface is flat.

Solid-state image capture device

An electronic component device includes a first electronic component on which a first electrode pad is disposed, a second electronic component on which a second electrode pad having a first pad portion and a second pad portion is disposed, a first bonding wire having one end connected to the first electrode pad and the other end connected to the first pad portion, and a second bonding wire having one end connected to a connection portion between the first pad portion and the first bonding wire and the other end connected to the second pad portion. The second electrode pad is disposed on the second electronic component so that the first pad portion and the second pad portion are laid along a direction intersecting with an extending direction of the first bonding wire. The extending direction of the first bonding wire intersects with an extending direction of the second bonding wire.

Electronic component device

A solid-state imaging device is provided with a plurality of photoelectric converting portions each having a photosensitive region and an electric potential gradient forming region, and which are juxtaposed so as to be along a direction intersecting with a predetermined direction, a plurality of buffer gate portions each arranged corresponding to a photoelectric converting portion and on the side of the other short side forming a planar shape of the photosensitive region, and accumulates a charge generated in the photosensitive region of the corresponding photoelectric converting portion, and a shift register which acquires charges respectively transferred from the plurality of buffer gate portions, and transfers the charges in the direction intersecting with the predetermined direction, to output the charges. The buffer gate portion has at least two gate electrodes to which predetermined electric potentials are respectively applied so as to increase potential toward the predetermined direction.

A solid state imaging device includes a P-type semiconductor substrateA, a P-type epitaxial layerB grown on the semiconductor substrateA, an imaging region VR grown within the epitaxial layerB, and an N-type semiconductor regionC grown within the epitaxial layerB. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well regionD formed within the epitaxial layerB. The N-type semiconductor regionC extends in the well regionD. A P-type impurity concentration in the well regionD is higher than a P-type impurity concentration in the epitaxial layerB. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well regionD.

Solid-state image sensing device containing electron multiplication function having N-type floating diffusion (FD) region formed within a P-type well region

A solid-state imaging deviceaccording to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging areathat generates a charge according to the amount of incident light, a plurality of output register unitstothat receive the charge from the imaging area, and a plurality of multiplication register unitstothat multiply charges from the output registersto, respectively, and the multiplication register unitstoare different in the number of multiplication stages from each other.

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Hamamatsu, Japan

Shin-ichiro Takagi