Jx Nippon Mining Metals Corporation

Jx Advanced Metals Corporation

Shin-ichi Ogino

Yuichiro Nakamura

Atsushi Sato

Hideo Takami

Atsutoshi Arakawa

Atsushi Nara

A method for preparing a package that can effectively suppress surface alteration even in a sputtering target whose surface is likely to be altered by moisture such as a sputtering target comprising an oxide of boron is provided. A method for preparing a package of sputtering target, including a step 1 of housing a sputtering target in a first packaging bag made of a film having a water vapor permeability of 1 g/(m·24 h) or less, and then vacuum sealing an opening of the first packaging bag; and a step 2 of housing the first packaging bag which has been vacuum sealed in the step 1, in a second packaging bag made of a film having a water vapor permeability of 1 g/(m·24 h) or less, and then enclosing one or more cushion gases selected from a group consisting of air and inert gas in the second packaging bag, and sealing an opening of the second packaging bag.

Method for preparing package of sputtering target, and method for transporting same

Provided is an Fe&#x2014;Pt based magnetic material sintered compact, comprising BN and SiOas non-magnetic materials, wherein Si and O are present in a region where B or N is present at a cut surface of the sintered compact. A high density sputtering target is provided which enables production of a magnetic thin film for heat-assisted magnetic recording media, and also reduces the amount of particles generated during sputtering.

Fe&#x2014;Pt based magnetic material sintered compact

Provided is an Fe&#x2014;Pt based magnetic material sintered compact, comprising BN and SiOas non-magnetic materials, wherein Si and O are present in a region where B or N is present at a cut surface of the sintered compact. An object of the present invention is to provide a high density sputtering target which enables production of a magnetic thin film for heat-assisted magnetic recording media, and also reduces the amount of particles generated during sputtering.

Fe-Pt based magnetic material sintered compact

An FePt-based sintered sputtering target containing C and/or BN, wherein an area ratio of AgCu alloy grains on a polished surface of a cross section that is perpendicular to a sputtered surface of the sputtering target is 0.5% or more and 15% or less. An object of this invention is to provide a sputtering target capable of reducing particles generation during sputtering and efficiently depositing a magnetic thin film of a magnetic recording medium.

Sputtering target for forming magnetic recording film and method for producing same

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

Magnetic material sputtering target and manufacturing method thereof

A C-containing FePt-based sputtering target for forming a magnetic recording film, wherein a ratio of an X-ray diffraction peak intensity of a graphite (002) plane in a cross section perpendicular to a sputtering surface relative to an X-ray diffraction peak intensity of a graphite (002) plane in a plane horizontal to a sputtering surface is 2 or more. A magnetic recording layer is configured from a magnetic phase such as an Fe&#x2014;Pt alloy and a nonmagnetic phase that separates the magnetic phase, and the sputtering target is a ferromagnetic material sputtering target in which carbon is used as a nonmagnetic phase material. When sputtered, the ferromagnetic material sputtering target is effective in preventing the generation of particles caused by an abnormal discharge originating from carbon, which is prone to aggregate.

Sputtering target for forming magnetic recording film and process for producing same

A sputtering target for a magnetic recording medium, wherein an average grain area of a B-rich phase is 90 &#x3bc;mor less. A process for producing a sputtering target for a magnetic recording medium, wherein an alloy cast ingot is subject to heat treatment, thereafter subject to primary rolling which includes at least one pass of cold rolling, thereafter subject to secondary rolling, and machined to prepare a target. The obtained sputtering target for a magnetic recording medium has few cracks in the B-rich phase and has a high leakage flux density, and by using this target, it is possible to stabilize the discharge during sputtering, suppress arcing which occurs from cracks in the B-rich phase, and suppress the generation of particles.

Sputtering target for magnetic recording medium, and process for producing same

An Fe-based magnetic material sintered compact containing BN, wherein the Fe-based magnetic material sintered compact has an oxygen content of 4000 wtppm or less. The present invention provides a sintered compact which enables the formation of a magnetic thin film in a thermally assisted magnetic recording media, and in which the generation of cracks and chipping is suppressed when the sintered compact is processed into a sputtering target or the like.

Fe-bases magnetic material sintered compact

A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe&#x2014;Pt)&#x2014;C(provided A is a number which satisfies 20&#x2264;A&#x2264;50 and X is a number which satisfies 35&#x2264;X&#x2264;55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.

Fe-Pt-based sputtering target with dispersed C grains

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (I/I) of peak intensities of the G-band to the D-band in Raman scattering spectrometry isor less. The sputtering target for a magnetic recording film, which contains carbon powders dispersed therein, makes it possible to produce a magnetic thin film having a granular structure without using an expensive apparatus for co-sputtering; and in particular, the target is an Fe&#x2014;Pt-based sputtering target. Carbon is a material which is difficult to sinter and has a problem that carbon particles are apt to form agglomerates. There is hence a problem that carbon masses are readily detached during sputtering to generate a large number of particles on the film after sputtering. The high-density sputtering target can solve these problems.

Sputtering target for magnetic recording film

A sputtering target for a magnetic recording film containing SiO, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

Sputtering target for magnetic recording film and process for production thereof

Provided is a sputtering target containing SiOfor a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

Sputtering target for magnetic recording film, and process for producing same

An Fe&#x2014;Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe&#x2014;Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.

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Ibaraki, Japan

Shin-ichi Ogino