Hitachi, Ltd.

Director-general of the Agency of Industrial Science and Technology

Shin-ichi Muramatsu

Yoshinori Miyamura

Yoshiaki Yazawa

Toshikazu Shimada

Ken Tsutsui

Terunori Warabisako

Haruo Itoh

Tsuyoshi Uematsu

Junko Minemura

Hiroyuki Ohtsuka

Tetsuhiko Takahashi

Toshio Sasaki

Yoshio Sakai

Toshiaki Masuhara

Osamu Minato

Atsushi Hiraiwa

Hiroshi Takeuchi

Satoru Ito

Shigeru Takahashi

Kiichiro Mukai

Hisao Katto

Seiki Harada

Norikazu Hashimoto

Katsuhisa Usami

Sunao Matsubara

Akihiro Tomozawa

Seiichi Iwata

Takeo Yoshimi

Nobuo Nakamura

A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements. The light reflecting plane has a structure as viewed on a cross section in a plane transverse to the module light receiving plane and traversing adjacent two photovoltaic elements and a light reflecting member therebetween such that the light reflecting plane includes, at least two first inclined planes and at least two second inclined planes, the first inclined planes being rightwardly ascending while the second inclined planes are leftwardly ascending, respectively, at least two first inclined planes being arranged on a right side of a middle point of a distance between the adjacent two photovoltaic elements while at least two second inclined planes being arranged on a left side of the middle point.

Light concentrator photovoltaic module method of manufacturing same and light concentrator photovoltaic system

Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like. In this module, each concentrator is formed into such a shape as to satisfy a relationship in which the light trapping efficiency of first incident light tilted rightwardly from the normal line of the light-incident plane in the cross-section including the light-incident plane, reflection plane and photo detector is larger than the light trapping efficiency of second incident light tilted leftwardly from the normal line in the above cross-section. Also, these concentrators are arranged in one direction.

Photovoltaic device, photovoltaic module and establishing method of photovoltaic system

In a radiation detector having a scintillator and a photodiode in combination, an amorphous silicon diode of a refractive index of 3.5 or below is used for a photodector to have a decreased junction capacitance. This shifts the spectral sensitivity characteristic of the photodetector toward the short wavelength side, thus providing a low-noise, high-sensitivity radiation detector matched well with the emission spectrum of the scintillator.

Radiation detector

A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to 300 .ANG. and at least one p-type doped amorphous silicon layer of a given thickness. The p-type doped amorphous silicon layer is stacked such that at least one face thereof is in contact with said at least one non-doped layer of amorphous silicon material so that the thin film of multi-layer structure exhibits in effect p-type conductivity.

Solar cell

A semiconductor device including at least a resistance element formed of polycrystalline silicon having a high resistivity. An electrode is provided on the high resistance polycrystalline silicon region with a silicon dioxide film and a silicon nitride film being interposed therebetween. The electrode is coupled to the ground potential. In this manner, high stability is obtained in the behavior of the resistance element inasmuch as the formation of a parasitic MOS device under said high resistance region is suppressed, and the threshold voltage of any such MOS device is made raised.

Semiconductor device

A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.

Semiconductor device with high density low temperature deposited Si.sub.w

Growing community of inventors

Kodaira, Japan

Shin-ichi Muramatsu