Samsung Electronics Co., Ltd.

Shin-hye Kim

Gil-heyun Choi

Kyung-Mun Byun

Min Soo Kim

Seung-Jae Lee

Hideki Horii

Min-Young Park

Hyeong-Geun An

Eunkee Hong

Deok-Young Jung

Sang-Kuk Kim

Keun-Hee Bai

Chul-Ho Shin

Hong-Rae Kim

Kyung-Seok Oh

Eun-kee Hong

Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.

Oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices

A semiconductor device may include a semiconductor substrate and a plurality of three-dimensional capacitors on the semiconductor substrate. Each of the plurality of three-dimensional capacitors may include a first three-dimensional electrode, a capacitor dielectric layer, and a second three-dimensional electrode with the first three-dimensional electrode between the capacitor dielectric layer and the semiconductor substrate and with the capacitor dielectric layer between the first and second three-dimensional electrodes. A plurality of capacitor support pads may be provided with each capacitor support pad being arranged between adjacent first three-dimensional electrodes of adjacent three-dimensional capacitors with portions of the capacitor dielectric layers between the capacitor support pads and the semiconductor substrate. Related methods and apparatuses are also discussed.

Semiconductor devices including 3-D structures with support pad structures and related methods and systems

In a method of forming a semiconductor cell structure, a first insulating layer may be formed on a semiconductor substrate. A connection pattern may be formed in the first insulating layer. Second and third insulating layers may be sequentially formed on the connection pattern. The third insulating layer may be etched at least twice and the second insulating layer may be etched at least once to form a through hole in the second and third insulating layers. The through hole may expose the connection pattern.

Method of forming semiconductor cell structure, method of forming semiconductor device including the semiconductor cell structure, and method of forming semiconductor module including the semiconductor device

Phase change memory devices include a heating electrode on a substrate and a phase change material pattern on the heating electrode. An adhesive pattern is disposed between the heating electrode and the phase change material pattern. The adhesive pattern contains carbon. Methods of fabricating phase change memory devices are also provided.

Phase change memory devices including carbon-containing adhesive pattern

A STI (shallow trench isolation) structure is formed with a liner layer that is converted from an initial material to a subsequent material. For example, the liner layer is initially comprised of nitride during wet etch-back of a dielectric fill material comprised of oxide to protect an oxide layer on a semiconductor substrate. Thereafter, an exposed portion of the liner layer is converted into the subsequent material of oxide to protect the dielectric fill material within the STI opening during etching away of masking layers to prevent formation of dents in the STI structure.

Shallow trench isolation structure with converted liner layer

Growing community of inventors

Suwon-si, South Korea

Shin-hye Kim