Advanced Semiconductor Engineering, Inc.

Ase (shanghai) Inc.

Ase Electronics Inc.

Shin-Hua Chao

Chao-Yuan Liu

Ho-Ming Tong

Teck-Chong Lee

Kuan-Neng Liao

Jau-Shoung Chen

Ming-Chiang Lee

Jen-Chieh Kao

Chih-Ming Chung

Hui-Ying Hsieh

Tai-Yuan Huang

Ming-Chi Liu

Yuan-Fu Sung

Yung-Cheng Huang

Hung-Sheng Chen

Tai-Chun Huang

Su Tao

Chih-Pin Hung

Chao-Fu Weng

Che-Ya Chou

Chian-Chi Lin

Shyh-Ing Wu

Shih-Kuang Chen

Jian-Wen Lo

Yao-Hsin Feng

In-De Ou

Kao-Ming Su

Song-Fu Yang

Hou-Chang Kuo

Han-Hsiang Huang

Chin-Long Wu

Chia-Shang Chen

Kuang-Hua Lin

Gin-Nan Yeh

A method of manufacturing a semiconductor package includes: (1) providing a first passivation layer on a carrier; (2) patterning the first passivation layer to define a first hole; (3) disposing a first seed layer on the first hole; (4) disposing a first conductive layer on the first seed layer; (5) replacing the carrier with a second passivation layer; (6) patterning the second passivation layer to define a second hole exposing the first seed layer; and (7) disposing a second conductive layer on the exposed first seed layer through the second hole.

Semiconductor packages

A semiconductor package includes: a passivation layer having a first surface and a second surface opposite to the first surface, the passivation layer defining a through hole extending from the first surface to the second surface, the through hole being further defined by a first sidewall and a second sidewall of the passivation layer; a first conductive layer on the first surface of the passivation layer and the first sidewall; a second conductive layer on the second surface of the passivation layer and the second sidewall; and a third conductive layer between the first conductive layer and the second conductive layer.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a substrate, a semiconductor element, a package body and a conductive part. The substrate has an electrical contact. The semiconductor element is disposed on the substrate. The package body covers the semiconductor element and defines a through hole from which the electrical contact is exposed. Wherein, the package body includes a resin body and a plurality of fiber layers. The fiber layers are disposed in the resin body and define a plurality of fiber apertures which is arranged as an array. The conductive part is electrically connected to the substrate through the through hole.

Method for manufacturing semiconductor package

Semiconductor package and manufacturing method thereof

A manufacturing process for a thermally enhanced package is disclosed. First, a substrate strip including at least a substrate is provided. Next, at least a chip is disposed on an upper surface of the substrate, and the chip is electrically connected to the substrate. Then, a prepreg and a heat dissipating metal layer are provided, and the heat dissipating metal layer is disposed on a first surface of the prepreg and a second surface of the prepreg faces toward the chip. Finally, the prepreg covers the chip by laminating the prepreg and the substrate.

Thermally enhanced package structure

A flip chip package process is provided. First, a substrate strip including at least one substrate is provided. Next, at least one chip is disposed on the substrate, and the chip is electrically connected to the substrate. Then, a stencil having at least one opening and an air slot hole is disposed on an upper surface of the substrate strip, an air gap is formed between the stencil and the substrate strip, the air gap connects the opening and the air slot hole, and the chip is located in the opening. Finally, a liquid compound is formed into the opening of the stencil to encapsulate the chip, and a vacuum process is performed through the air slot hole and the air gap, so as to prevent the air inside the opening from being encapsulated by the liquid compound to become voids.

Flip chip package process

A packaging substrate and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, a first packaging substrate including several first substrate units and at least one defected substrate unit is provided. Next, the defected substrate unit is separated from the packaging substrate, and at least one opening is formed in a frame of the first packaging substrate correspondingly. Then, a second substrate unit is provided. The shape of the second substrate unit is different from the shape of the opening. Afterwards, the second substrate unit is disposed in the opening.

Packaging substrate and manufacturing method thereof

A multi-chip package structure comprising a first chip, a patterned lamination layer, a plurality of first bumps, a second chip and second bumps is provided. The first chip has a first active surface. The patterned lamination layer is disposed on a portion area of the first active surface. The first chip has a plurality of first bonding pads disposed on the first active surface exposed by the patterned lamination layer and the patterned lamination layer has a plurality of second bonding pads disposed thereon. The second chip has a second active surface and the first bumps are disposed on the second active surface. The second chip is electrically connected to the first bonding pads through the first bumps. The second bumps are disposed on the second bonding pads. Moreover, the multi-chip package structure further comprises a component disposed on the first chip and electrically connects to the first bonding pads.

Multi-chip package structure

A circuit substrate includes a board, a plurality of metal layers and an insulator. The board has a plurality of conductive traces layers and a via formed therein. The metal layers are formed on the inner wall of the via and each of the metal layers is electrically connected to its corresponding conductive traces layer. The via is filled with the insulator so that each of the metal layers is electrically isolated from each other. In addition, this invention also provides a fabrication method of the circuit substrate.

Circuit substrate and fabrication method thereof

An improved method of integrally attaching a heat sink to an IC package for enhancing the thermal conductivity of the package. A heat sink matrix, which is dividable into a plurality of individual heat sinks, is attached to an IC package matrix, which is comprised of a plurality of individual IC packages abutting each other in a matrix arrangement. The IC package matrix and the heat sink matrix attached thereto are then simultaneously cut by means of a machine tool into a plurality of individually formed IC packages each with a heat sink attached; thereby, thermal conductivity of a conventional IC package is enhanced.

Method of attaching a heat sink to an IC package

A structure of a heat spreader substrate. A first heat spreader has a first upper surface, a corresponding first lower surface and an opening. A second heat spreader has a second upper surface and a corresponding second lower surface. The second heat spreader is fit tightly into the opening. The second lower surface and the first lower surface are coplanar. A thickness of the second heat spreader is smaller than that of the first heat spreader. A chip is located on the second upper surface. A substrate is located on the first upper surface of the first heat spreader, and the opening is exposed by the substrate.

Structure and package of a heat spreader substrate

A heat-spread substrate consisting of a metal heat spreader and a substrate is disclosed. The metal heat spreader has a surface with a cavity, which is adapted for supporting a die. Such surface further includes a ground ring arranged at the periphery of the cavity; a substrate-supporting surface surrounding the periphery of the ground ring; a plurality of first ground pads arranged at the periphery of the substrate-supporting surface; and a plurality of second ground pads arranged on the substrate-supporting surface and protruding it. The substrate is provided on the substrate-supporting surface having a plurality of through holes. The through holes corresponds to the first ground pad so as to make it be located therein, respectively. The substrate further includes a plurality of mounting pads and a plurality of ball pads, in which the mounting pads are close to the cavity, and the first ground pad, the second ground pads and the ball pads are formed in the form of ball grid array and are coplanar roughly.

Heat-spread substrate

A ball grid array semiconductor package includes a substrate, a die mounted on the substrate and electrically connected to the substrate by bonding wires, a heat ring mounted on the substrate to surround the die and the bonding wires, and a heat slug mounted on the heat ring to entirely cover the die and the bonding wires thereby providing improved heat dissipation efficiency and overall electrical performance. Encapsulation material is filled into an inner space surrounded by the heat ring, heat slug and substrate to form an encapsulant for protecting the die and bonding wires. The heat ring and heat slug has at least a portion of surface area sequentially coated with a metal medium layer and an insulation layer to enhance the bonding degree between the encapsulant and the heat ring and heat slug.

Ball grid array semiconductor package having improved heat dissipation efficiency, overall electrical performance and enhanced bonding capability

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Kaohsiung, Taiwan

Shin-Hua Chao