Taiwan Semiconductor Manufacturing Comp. Ltd.

Shin Hsien Liao

Chia-Pin Lin

Hsien-Chin Lin

Shyue-Shyh Lin

Li-Shiun Chen

Tian-Choy Gan

Da-Yuan Lee

Kuang-Yuan Hsu

Ming-Jie Huang

Matt Yeh

Hui OuYang

Fan-Yi Hsu

Yi-Chen Huang

Hung-Hsin Liang

Hsueh-Chin Lu

Pei-Wen Chi

A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate.

Method for semiconductor manufacturing

Provided is a method of fabricating a semiconductor device that includes forming first and second fins over first and second regions of a substrate, forming first and second gate structures over the first and second fins, the first and second gate structures including first and second poly gates, forming an inter-level dielectric (ILD) over the substrate, performing a chemical mechanical polishing on the ILD to expose the first and second poly gates, forming a mask to protect the first poly gate of the first gate structure, removing the second poly gate thereby forming a first trench, removing the mask, partially removing the first poly gate thereby forming a second trench, forming a work function metal layer partially filling the first and second trenches, forming a fill metal layer filling a remainder of the first and second trenches, and removing the metal layers outside the first and second trenches.

Hybrid gate process for fabricating FinFET device

Hybrid gate process for fabricating finfet device

A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal gate electrode is formed by filling the modified profile opening with a conductive material. A semiconductor device is also described, the device having a metal gate structure with a first width and a second, differing, width.

Modified profile gate structure for semiconductor device and methods of forming thereof

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Minsyong, Taiwan

Shin Hsien Liao