Powerchip Semiconductor Manufacturing Corporation

Shin-Hong Chen

Yu-Jen Huang

Ying-Chi Cheng

A semiconductor device and a method for forming the same are provided. The semiconductor device includes a substrate and a gate structure. The gate structure is disposed in the substrate and includes a shielded gate, a control gate, and a plurality of insulating layers. The shielded gate includes a bottom gate and a top gate. The bottom gate includes a step structure consisting of a plurality of electrodes. A width of the electrode is smaller as the electrode is farther away from the top gate, and a width of the top gate is smaller than a width of the electrode closest to the top gate. The control gate is disposed on the shielded gate. A first insulating layer is disposed between the shielded gate and the substrate. A second insulating layer is disposed on the shielded gate. A third insulating layer is disposed between the control gate and the substrate.

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Hsinchu, Taiwan

Shin-Hong Chen