Hynix Semiconductor Inc.

Skhynix Inc.

Shin Ho Chu

Sun Mo An

Myung Hwan Lee

Jong Won Lee

Sang Jin Park

Yun Seok Hong

Ho Uk Song

Sang-il Park

Mi Hyun Hwang

Min Jung Koh

A semiconductor integrated circuit capable of controlling test modes without stopping testing of the semiconductor integrated circuit is presented. The semiconductor integrated circuit includes a test mode control unit configured to produce, in response to address decoding signals, a plurality of test mode signals of a first group and a plurality of test mode signals of a second group. The test mode control unit selectively inactivates the test mode signals of the first group by providing a reset signal using the test mode signals of the second group. Therefore, the testing time of the semiconductor integrated circuit can be reduced by inactivating the previous test mode using the reset signal and by executing a new test mode without disconnecting the test mode state.

Semiconductor integrated circuit capable of controlling test modes without stopping test

A semiconductor memory device may be effectively evaluated by a test that compares the phase of an internally generated control signal with the phase of an internally generated clock signal. Specifically, if the phase of the internal data strobe signal IDQS is synchronized with the phase of the internal clock signal ICLK through the test, the data strobe signal DQS may also be synchronized with the external clock signal CLK. Thus, the test may prevent certain critical parameters, for example, AC parameter tDQSCK, from being out of an allowable range over PVT (process, voltage, and temperature variation). The test helps ensure that the semiconductor memory device will operate properly in read mode.

Semiconductor memory devices and semiconductor system having parameters, and methods of testing the same

A semiconductor memory device includes a write controller configured to transmit a first input data that is supplied through a first pad, to a first global I/O line and a second global I/O line when a write operation is executed in a test mode. The semiconductor memory device further includes a first write driver configured to store the first input data via the first global I/O line in a first cell block when the write operation is executed in the test mode. The semiconductor memory device further includes a first I/O line driver configured to supply signals to the first global I/O line and a first test I/O line in response to a first output data supplied from the first cell block when a read operation is executed in the test mode.

Semiconductor memory device and method of testing the same

A semiconductor memory device includes a transmission line configured to transmit a fuse enable signal for performance of a repair operation; a first repair enable signal generation unit configured to receive the fuse enable signal through the transmission line and generate a first repair enable signal for performing a repair operation for a first bank; and a second repair enable signal generation unit configured to receive the fuse enable signal through the transmission line and generate a second repair enable signal for performing a repair operation for a second bank.

Semiconductor memory device for improving repair efficiency

A driver circuit of a semiconductor apparatus includes a driver and a control unit configured to vary a voltage level of a power supply terminal of the driver in response to a standby mode signal.

Driver circuit of semiconductor apparatus and method for controlling the same

A semiconductor memory device includes: a strobe clock generator configured to generate a strobe clock signal having a delay time controlled according to a plurality of test mode signals which are selectively enabled in response to a read signal or write signal; an internal address generator configured to latch an address in response to a first level of the strobe clock signal, and generate an internal address by decoding the address in response to a second level of the strobe clock signal; and an output enable signal generator configured to decode the internal address and generate output enable signals which are selectively enabled.

Address decoding method and semiconductor memory device using the same

A semiconductor integrated circuit includes a multi-mode control signal generating unit configured to control an activation of a up/down mat I/O switch control signal, which controls I/O switches in a up/down mat, according to a multi-test mode signal and a read/write discriminating signal, a multi-mode decoder configured to output multi-mat select signals to simultaneously activate a plurality of mats according to a multi-test mode active write signal, and a mat controller configured to enable word lines and the I/O switches according to the up/down mat I/O switch control signal and the multi-mat select signals.

Semiconductor integrated circuit with multi test

A temperature data output circuit is provided which is capable of outputting a temperature signal which is enabled when an internal temperature of at least one of the semiconductor memory chips mounted on a multi chip package exceeds a predetermined temperature.

Thermal data output circuit and multi chip package using the same

In an anti-fuse repair control circuit, a semiconductor memory device is integrated into a multi-chip package to perform an anti-fuse repair. An anti-fuse repair control circuit includes a data mask signal input circuit, a cell address enable unit a repair enable unit, and a repair unit. The data mask signal input circuit receives and outputs a data mask signal upon receiving a test control signal for an anti-fuse repair. The cell address enable unit receives an anti-fuse repair address to enable a cell address of an anti-fuse cell to be repaired upon receiving the data mask signal outputted from the data mask signal input circuit. The repair enable unit codes the cell address and output a repair enable signal and a drive signal according to whether or not an anti-fuse cell corresponding to the cell address is enabled. The repair unit supplies a repair voltage to the anti-fuse cell when the repair enable signal, the address, and the drive signal are enabled.

Anti-fuse repair control circuit and semiconductor device including DRAM having the same

The present invention relates to an anti-fuse repair control circuit which regulates transmission of a power voltage and a back-bias voltage that are converted to repair an anti-fuse to a circuit part. As such, the present invention prevents the influence of a high power voltage or a low back-bias voltage on a circuit part such as a cell, a peripheral circuit, or a core region during an anti-fuse repair. The anti-fuse repair control circuit includes an anti-fuse repair enabling part providing an anti-fuse repair enabling signal corresponding to a repair of an anti-fuse; a power voltage control part controlling transmission of a power voltage to a first circuit part according to an enablement state of the anti-fuse repair enabling signal; and a back-bias voltage control part controlling transmission of a back-bias voltage to a second circuit part according to the enablement state of the anti-fuse repair enabling signal.

Anti-fuse repair control circuit for preventing stress on circuit parts

Various examples of internal voltage generation circuit are provided. In one example, the internal voltage generation circuit includes a level control signal generator for generating a level control signal in response to a power down mode signal, which is activated synchronously with a clock enable signal, and a precharge flag signal, which is enabled when a precharge operation, is performed, and an internal voltage generator for generating an internal voltage in response to the level control signal and outputting it to an output node.

Internal voltage generation circuit

A first signal input circuit outputs a first control signal in response to self-refresh and active signals. A second signal input circuit outputs a second control signal in response to the self-refresh and active signals. The power supply circuit applies a first supply voltage to an output terminal in response to the first control signal. An elevated voltage generator generates a elevated voltage by pumping a second supply voltage, and applies the elevated voltage to the output terminal, in response to the first and second control signals.

Semiconductor memory apparatus

A semiconductor package facilitates package connection due to different locations of input/output pads in each interlayer die depending on coding information in a multi-chip package. The semiconductor package includes many chips. Each of the chips includes: input/output pads configured to input and output data having a given bandwidth; a decoding pad configured to receive coding information; and a code control unit configured to decode the coding information and to enable an input/output pad positioned at a specific location among the input/output pads according to the decoding result.

Semiconductor package

A deep power down mode control circuit is provided. The deep power down mode control circuit includes a deep power down signal generator for outputting a deep power down signal in response to a burst command signal and a clock enable signal, and a deep power down delay controller for delaying the deep power down signal for a predetermined delay time, and outputting the delayed signal.

Growing community of inventors

Icheon-si, South Korea

Shin Ho Chu