Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Shin Hashimoto

Yoshiharu Hidaka

Kyoko Egashira

Akihiro Tanoue

Isao Miyanaga

Toshio Yamada

Shinji Odanaka

Hiroyuki Umimoto

Yoshiro Nakata

Atsushi Fujiwara

Yasushi Okuda

Yoshirou Nakata

Yukiharu Uraoka

Kenzou Hatada

Masayuki Endo

Hisashi Ogawa

Junji Hirase

Mikio Nishio

Susumu Matsumoto

Tadaaki Mimura

Akemi Kawaguchi

Kaoru Inoue

Kiyoshi Morimoto

Koichi Hashimoto

Masaaki Niwa

Hiroaki Nakaoka

Yoshihiko Hirai

Kenji Okada

Masashi Hayashi

Juro Yasui

Yuichi Miyoshi

Yasuaki Terui

Atsuhiro Kajiya

Takenobu Kishida

Kenji Noda

Atsuo Wada

Toru Nishiwaki

Tomoya Tanaka

Yoshifumi Hata

A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate () including a silicon carbide layer (); a high-concentration impurity region () provided in the silicon carbide layer (); an ohmic electrode () electrically connected with the high-concentration impurity region (); a channel region electrically connected with the high-concentration impurity region; a gate insulating layer () provided on the channel region; and a gate electrode () provided on the gate insulating layer (). The ohmic electrode () contains an alloy of titanium, silicon and carbon, and the gate electrode () contains titanium silicide.

Semiconductor device and method for manufacturing the same

A production method for a semiconductor device includes providing a semiconductor substrate having semiconductor layer of a first conductivity type formed on a surface thereof; forming a first mask so as to cover a predetermined region of the semiconductor layer; (c) forming a well region of a second conductivity type by implanting impurity ions of the second conductivity type into the semiconductor layer having the first mask formed thereon; reducing the thickness of the first mask by removing a portion of the first mask; forming a second mask covering a portion of the well region by using photolithography; and forming a source region of the first conductivity type by implanting impurity ions of the first conductivity type into the semiconductor layer having the first mask with the reduced thickness and the second mask formed thereon.

Method for manufacturing semiconductor device using multiple ion implantation masks

A semiconductor device is composed of: an interconnect made of a first conductive film and a second conductive film that are stacked in sequence from the interconnect underside on an insulating film formed on a substrate; and a capacitor composed of a lower capacitor electrode made of the first conductive film, a dielectric film formed on the lower capacitor electrode, and an upper capacitor electrode made of the second conductive film and formed on the dielectric film.

Semiconductor device and method for fabricating the same

A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate.

Semiconductor device with multilayered metal pattern

A photomask includes, on a translucent substrate, three or more first light-shielding portions each in insular shape having a property of shielding exposure light and spaced equidistantly, a second light-shielding portion having a property of shielding the exposure light and formed to connect the adjacent first light-shielding portions, and first light-transmitting portions each in slit shape having a property of transmitting the exposure light and formed to be surrounded with the first and second light-shielding portions. The second light-shielding portion is formed to contain a point located equidistantly from the three or more first light-shielding portions.

Photomask and method for forming pattern

A slurry feeding apparatus includes closed slurry bottle, piping, wet nitrogen generator, wet nitrogen supply pipe, suction and spray nozzles, temperature regulator, flow rate control valves, slurry delivery pump and controller for controlling the operation and flow rate of the slurry delivery pump. While a wafer is being polished by a CMP polisher, the controller continuously operates the pump. On the other hand, while the polisher is idling, the controller starts and stops the pump intermittently at regular intervals. No stirrer like a propeller is inserted into the slurry bottle, but the slurry is stirred up by spraying the slurry through the spray nozzle.

Polishing method

Apparatus and method for feeding slurry

After distributing a nonmetal element in a region in the vicinity of a surface portion of a semiconductor layer, a metal film is deposited on the semiconductor layer. Next, a semiconductor-metal compound layer is epitaxially grown in the surface portion of the semiconductor layer by causing a reaction between an element included in the semiconductor layer and a metal included in the metal film through annealing carried out on the metal film.

Method for fabricating semiconductor device

A memory cell transistor and a planar capacitor are provided in a memory region, and both transistors of a CMOS device are provided in a logic circuit region. A capacitance dielectricand a plate electrodeof the planar capacitor are provided over a trench shared with a shallow trench isolationand the upper part of the trench is filled with the capacitance dielectricand the plate electrodeAn n-type diffusion layerthat is a storage node is formed, with an end region thereof extending along one side of the upper part of the trench, to a region of the substrate overlapping with the shallow trench isolationThe area of a part of the substrate functioning as a capacitor can be increased without increasing the substrate area.

Semiconductor device and its manufacturing method

Growing community of inventors

Osaka, Japan

Shin Hashimoto