Macronix International Co., Ltd.

Shin-Chang Tsai

Chun-Hung Lee

Ta-Hung Yang

Yu-Chung Chen

Hsin-Fang Su

Measurements of line roughness are separated into groups depending upon pre-layers. Image data collected from similar pre-layer types are considered together in order to separate effects of line roughness from distortion of measurements caused by the pre-layers. The resulting line roughness measurements are used to estimate an aspect of line quality.

Measurement of line-edge-roughness and line-width-roughness on pre-layered structures

A structure of a semiconductor device including a substrate and a patterned layer is provided. The patterned layer being patterned to have an open area and a dense area is disposed on the substrate. The patterned layer includes, in the dense area, a first pattern adjacent to the open area and a second pattern. The first pattern has a first bottom. The second pattern has a second bottom width. The bottom of the first pattern includes a recess facing the open area, so that the first bottom width is close to the second bottom width.

Growing community of inventors

Hsin-Chu, Taiwan

Shin-Chang Tsai