Egtm Co., Ltd.

Skhynix Inc.

Shin Beom Kim

Tae Young Lee

Sun Young Baik

Sung Jun Ji

Sang Hyun Lee

Dong Kyun Lee

Tae Hwan Lim

Su Pill Chun

Jang Keun Sim

According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1:

Organo tin compound for thin film deposition and method for forming tin-containing thin film using same

According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Niobium precursor compound for thin film deposition and method for forming niobium-containing thin film using same

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Seongnam-Si, South Korea

Shin Beom Kim