Ulvac, Inc.

Nihon Shinku Gijutsu Kabushiki Kaisha

Shin Asari

Kyuzo Nakamura

Masanori Hashimoto

Yoshifumi Ota

Kazuya Saito

Shuji Osono

Tsutomu Asaka

Toru Kikuchi

Taro Morimura

A catalytic chemical vapor deposition apparatus comprising a catalyst wire including a tantalum wire and a boride layer formed on a surface of the tantalum wire is used. The boride of the metal tantalum (tantalum boride) is harder than the metal tantalum. Therefore, by using the tantalum wire having the boride layer formed on the surface thereof as a catalyst wire, it is possible to reduce thermal expansion of the catalyst wire, improve mechanical strength, and prolong the service life. Further, by performing energization heating of the catalyst wire by continuous energization, it is further possible to prolong the service life of the catalyst wire.

Deposition method and method of manufacturing a catalyst wire for a catalytic chemical vapor deposition apparatus

[Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor. [Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.

Method of producing thin film transistor and thin film transistor

An enhancement of the Kerr rotation angle is obtained in a magnetic recording member by providing an amorphous layer of Si, Ge, or alloy thereof. Such layer may further contain any of the following additional elements: H, C, F, N and O.

Optical magnetic recording member

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Sammu, Japan

Shin Asari