Kabushiki Kaisha Toshiba

Shimpei Yoshioka

Koji Maruyama

Toshiaki Sato

Kazuo Konishi

Yasuhito Saito

Hiroki Sekiya

Nobumitsu Tada

Tomoyuki Maekawa

Keizo Hagiwara

Toshiharu Obu

Naotake Watanabe

Setsuo Terasaki

Takaaki Suyama

Hiroaki Matsubara

Youko Maekawa

A semiconductor package includes a semiconductor device having a first main surface and a second main surface, a first electrode plate provided on the first main surface, a second electrode plate provided on the second main surface, and a wiring substrate provided between the semiconductor device and the first electrode plate, in which a plurality of opening portions in the side surface of a protruding portion provided on the first electrode plate are engaged respectively with a plurality of engaging portions which face the opening portions and which are provided on the inner side surface of an intrusion opening portion in the wiring substrate into which the protruding portion is intruded.

Semiconductor package and method for manufacturing the same

By providing a plurality of semiconductor chips that are connected in parallel and constitute one arm of an inverter; a first conductor to which a face on one side of said plurality of semiconductor chips is connected; a wide conductor to which a face on the other side of said plurality of semiconductor chips is connected; a second conductor said first conductor and second conductor are connected connected to said wide conductor; and a cooler to which through an insulating resin sheet, part of the heat loss generated in the semiconductor chips is thermally conducted to the first conductor and is thence thermally conducted to the cooler, producing cooling, while another part thereof is thermally conducted to the wide conductor and thence to the second conductor, whence it is thermally conducted to the cooler, producing cooling.

Method of manufacturing an inverter device

By providing a plurality of semiconductor chips that are connected in parallel and constitute one arm of an inverter; a first conductor to which a face on one side of said plurality of semiconductor chips is connected; a wide conductor to which a face on the other side of said plurality of semiconductor chips is connected; a second conductor connected to said wide conductor; and a cooler to which said first conductor and second conductor are connected through an insulating resin sheet, part of the heat loss generated in the semiconductor chips is thermally conducted to the first conductor and is thence thermally conducted to the cooler, producing cooling, while another part thereof is thermally conducted to the wide conductor and thence to the second conductor, whence it is thermally conducted to the cooler, producing cooling.

Inverter device and method of manufacturing the device thereof, and electric automobile incorporating the inverter device thereof

A semiconductor device includes a pair of semiconductor switching elements and a board. Each semiconductor switching element has positive and control electrodes formed on one surface and a negative electrode formed on the other surface. The positive and control electrodes of one of the semiconductor switching elements are joined to the board, and the negative electrode of the other semiconductor switching element, which faces in a direction opposite to that of one of the semiconductor switching elements, is joined to the board.

Semiconductor device

This invention provides a memory card device using an EEPROM as a semiconductor memory. When a data write-in defective area is detected in the storage area of the EEPROM, a space area is retrieved from the storage area of the EEPROM as a relieving area and data to be written into the data write-in defective area is written into the relieving area. Then, when the relieving area becomes full and a data write-in defective area is detected in the storage area of the EEPROM, another space area is retrieved from the storage area of the EEPROM as a new relieving area and data to be written into the data write-in defective area is written into the new relieving area.

EEPROM memory card device having defect relieving means

A circuit substrate which is formed by fixing a wiring pattern on an insulated substrate has a shielding member for absorbing or reflecting radio waves formed on a first electronic component electrically connected. A shielding layer for absorbing or reflecting radio waves is formed on the circuit substrate. And, a second electronic component is disposed between the first electronic component and the shielding layer.

Circuit substrate shielding device

A memory card apparatus has an EEPROM as a semiconductor memory. Each time data is written in the EEPROM, link data representing a recording location of the data is written and managed in a link table. The link table has a flag region with a flag which is set when data write in the EEPROM is requested and is reset when the link data has completely been written in the link table. In case of card removal during operation or power failure, the flag set in the flag region of the link table is not reset and remains. Thus, by checking the flag area of the link table, the occurrence of card removal during operation or power failure can be detected, and various countermeasures can be conducted. Thus, the correspondency between the recorded contents in the EEPROM and the contents in the link table can be maintained as much as possible.

Memory card apparatus including a link table for managing the

A memory card apparatus using EEPROMs as semiconductor memories. Externally input data are temporarily recorded in a buffer memory and are subsequently written in the EEPROMs. Verify processing is automatically performed between the buffer memory and the EEPROMs. Similarly, data read out from the EEPROMs are temporarily recorded in the buffer memory and are subsequently output to an external unit. Even with the EEPROMs, it seems that this memory card can be used in the same manner as a memory card using an SRAM, when viewed from the outside of the card.

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Yokohama, Japan

Shimpei Yoshioka